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Part: PMEM4020PD
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: PNP Transistor/schottky-diode Module<<<>>>combination of a PNP Transistor With Low Vcesat And High Current Capability And a Planar Schottky Barrier Diode With an Integrated Guard Ring For Stress Protection in a SOT457 (SC-74) Small Plastic Package. NPN Complement: PMEM4020ND. <<<>>><<<>>> <<<>>> Features 600 MW Total Power Dissipation <<<>>>High Current Capability <<<>>>Reduces Required PCB Area <<<>>>Reduced Pick And Place Costs <<<>>>Small Plastic SMD Package. <<<>>>Transistor<<<>>>Low Collector-emitter Saturation Voltage. <<<>>>Diode<<<>>>Ultra High-speed Switching <<<>>>Very Low Forward Voltage <<<>>>Guard Ring Protected.
Company: Philips Semiconductors
Datasheet: Download PMEM4020PD datasheet File size : 79 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PMEM4020PD PNP transistor/Schottky-diode module
Product specification 2003 Nov 24
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
FEATURES · 600 mW total power dissipation · High current capability · Reduces required PCB area · Reduced pick and place costs · Small plastic SMD package. Transistor · Low collector-emitter saturation voltage. Diode · Ultra high-speed switching · Very low forward voltage · Guard ring protected. APPLICATIONS · DC-to-DC converters · Inductive load drivers · General purpose load drivers · Reverse polarity protection circuits. DESCRIPTION Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. NPN complement: PMEM4020ND. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020PD - DESCRIPTION plastic surface mounted package; 6 leads
Marking code: B7.
handbook, halfpage 6
PMEM4020PD
PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION
5
4
4 5 1 3 6
1
2
3
MGU868
Fig.1
Simplified outline (SOT457) and symbol.
VERSION SOT457
2003 Nov 24
2
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PNP transistor VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter open base open collector note 1 note 2 note 3 Ts 55 °C; note 4 ICM IBM Ptot peak collector current peak base current total power dissipation Tamb 25 °C; note 1 Tamb 25 °C; note 2 Tamb 25 °C; note 3 Ts 55 °C; note 4 Tj VR IF IFSM Ptot junction temperature Schottky barrier diode continuous reverse voltage continuous forward current non-repetitive peak forward current total power dissipation t = 8.3 ms half sinewave; JEDEC method Tamb 25 °C; note 1 Tamb 25 °C; note 2 Tamb 25 °C; note 3 Ts 55 °C; note 4 Tj Ptot Tstg Tamb Notes junction temperature note 2 Tamb = 25 °C; note 2 note 2 Combined device total power dissipation storage temperature operating ambient temperature - -65 -65 - - - - - - - - - - - - - - - - - - - - - - PARAMETER CONDITIONS
PMEM4020PD
MIN.
MAX. -40 -40 -5 -0.75 -1 -1.3 -2 -3 -1 295 400 500 1 000 150
UNIT
V V V A A A A A A mW mW mW mW °C V A A mW mW mW mW °C mW °C °C
20 1 5 295 400 500 1 000 150
600 +150 +150
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and cathode both 1 cm2. 3. Mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Solder point of collector or cathode tab.
2003 Nov 24
3
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