|
Details, datasheet, quote on part number:PMGD280UN
| |
| Part: | PMGD280UN |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | Dual N-channel Utrenchmos (tm) Ultra Low Level Fet<<<>>>features Surface Mounted Package <<<>>>Footprint 40pct Smaller Than SOT23 <<<>>>Dual Device <<<>>>Fast Switching <<<>>>Low On-state Resistance <<<>>>Low Threshold Voltage. <<<>>><<<>>> <<<>>> Applications Driver Circuits <<<>>>Switching in Portable Appliances. |
| Company: | Philips Semiconductors |
| Datasheet: | Download PMGD280UN datasheet File size : 96 kB |
| Request For quote: | Find where to buy PMGD280UN
|
| |
Datasheet text preview:
PMGD280UN
Dual N-channel µTrenchMOSTM ultra low level FET
MBD128
Rev. 01 -- 10 February 2004
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology.
1.2 Features
s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS 20 V s Ptot 0.41 W s ID 0.87 A s RDSon 340 m.
2. Pinning information
Table 1: Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description source (s1) gate (g1) drain (d2) source (s2) gate (g2) drain (d1)
s1 1 Top view 2 3
MSA370
Simplified outline
6 5 4
Symbol
d1 d2
g1
s2
g2
MSD901
SOT363 (SC-88)
Philips Semiconductors
PMGD280UN
Dual N-channel µTrenchMOSTM ultra low level FET
3. Ordering information
Table 2: Ordering information Package Name Description Plastic surface mounted package; 6 leads Version Type number
PMGD280UN
SC-88
SOT363
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM
[1]
Conditions 25 °C Tj 150 °C 25 °C Tj 150 °C; RGS = 20 k Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.5 V; Figure 2 Tsp = 25 °C; pulsed; tp 10 µs; Figure 3 Tsp = 25 °C; Figure 1
[1] [1] [1]
Min -55 -55
[1] [1]
Max 20 20 ±8 0.87 0.55 1.75 0.4 +150 +150 0.34 0.69
Unit V V V A A A W °C °C A A
drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature
Source-drain diode source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10 µs
Single device conducting.
-
9397 750 12763
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 10 February 2004
2 of 12
Philips Semiconductors
PMGD280UN
Dual N-channel µTrenchMOSTM ultra low level FET
120 Pder (%) 80
03aa17
120 Ider (%) 80
03aa25
40
40
0 0 50 100 150 Tsp (°C) 200
0 0 50 100 150 200 Tsp (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
Fig 2. Normalized continuous drain current as a function of solder point temperature.
10 ID (A)
03an09
Limit RDSon = VDS / ID tp = 10 µ s 1 100 µ s
1 ms 10-1 DC 10 ms
100 ms
10-2 10-1 1 10 VDS (V) 102
Tsp = 25 °C; IDM is single pulse; VGS = 4.5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12763
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 10 February 2004
3 of 12
|
|
