|
|
Part: PMGD370XN
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: Dual N-channel Utrenchmos (tm) Extremely Low Level Fet<<<>>>features Surface Mounted Package <<<>>>Footprint 40 Pct. Smaller Than SOT23 <<<>>>Dual Device <<<>>>Fast Switching <<<>>>Low On-state Resistance <<<>>>Low Threshold Voltage. <<<>>><<<>>> <<<>>> Applications Driver Circuits <<<>>>Switching in Portable Appliances.
Company: Philips Semiconductors
Datasheet: Download PMGD370XN datasheet File size : 109 kB
Request For quote: Find where to buy PMGD370XN
Datasheet text preview:
PMGD370XN
Dual N-channel µTrenchMOSTM extremely low level FET
MBD128
Rev. 01 -- 27 February 2004
Product data
1. Product profile
1.1 Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology.
1.2 Features
s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS 30 V s Ptot 0.41 W s ID 0.74 A s RDSon 440 m.
2. Pinning information
Table 1: Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description source (s1) gate (g1) drain (d2) source (s2) gate (g2) drain (d1)
s1 1 Top view 2 3
MSA370
Simplified outline
6 5 4
Symbol
d1 d2
g1
s2
g2
MSD901
SOT363 (SC-88)
Philips Semiconductors
PMGD370XN
Dual N-channel µTrenchMOSTM extremely low level FET
3. Ordering information
Table 2: Ordering information Package Name PMGD370XN SC-88 Description Plastic surface mounted package; 6 leads Version SOT363 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10 µs Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 4.5 V; Figure 2 Tsp = 25 °C; pulsed; tp 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C Tj 150 °C 25 °C Tj 150 °C; RGS = 20 k Min -55 -55 Max 30 30 ±12 0.74 0.47 1.49 0.41 +150 +150 0.34 0.69 Unit V V V A A A W °C °C A A
Source-drain diode
9397 750 12761
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 27 February 2004
2 of 12
Philips Semiconductors
PMGD370XN
Dual N-channel µTrenchMOSTM extremely low level FET
120 Pder (%) 80
03aa17
120 Ider (%) 80
03aa25
40
40
0 0 50 100 150 Tsp (°C) 200
0 0 50 100 150 200 Tsp (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
Fig 2. Normalized continuous drain current as a function of solder point temperature.
10
03an16
ID (A)
Limit RDSon = VDS / ID tp = 10 µ s 1 100 µ s
10-1
DC
1 ms 10 ms
100 ms
10-2 10-1
1
10
VDS (V)
102
Tsp = 25 °C; IDM is single pulse; VGS = 4.5 V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12761
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 27 February 2004
3 of 12
Others parts begin by pm
PM-1 PM-2 PM-3 PM-4 PM-5 PM-6 PM-7
|
|
|
