Details and datasheet on part: PMGD8000LN

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Part: PMGD8000LN

Category:
Discrete
   -> Transistors
     -> FETs (Field Effect Transistors)
       -> MOSFETs
         -> Power MOSFETs

Description: PMGD8000LN; Dual Utrenchmos (tm) Logic Level FET;; Package: SOT363 (UMT6)

Company: Philips Semiconductors

Datasheet: Download PMGD8000LN datasheet File size : 109 kB

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Datasheet text preview:
PMGD8000LN
Dual µTrenchMOSTM logic level FET
MBD128
Rev. 01 -- 27 February 2003
Product data
1. Description
Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM technology. Product availability: PMGD8000LN in SOT363 (SC-88).
2. Features
s s s s TrenchMOSTM technology Ver y fast switching Logic level compatible Subminiature surface mount package.
3. Applications
s Batter y management s High-speed switch s Low power DC-to-DC converter.
4. Pinning information
Table 1: Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description source (s1) gate (g1) drain (d2) source (s2) gate (g2) drain (d1)
1 Top view 2 3
MSA370
Simplified outline
6 5 4
Symbol
d1 d2
s1
g1
s2
g2
MSD901
SOT363 (SC-88)
Philips Semiconductors
PMGD8000LN
Dual µTrenchMOSTM logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C Tj 150 °C Tamb = 25 °C; VGS = 4 V Tamb = 25 °C VGS = 4 V; ID = 10 mA VGS = 2.5 V; ID = 1 mA Typ 1.8 2.9 Max 30 125 0.2 150 8 13 Unit V mA W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tamb = 25 °C Tamb = 25 °C; VGS = 4 V; Figure 2 and 3 Tamb = 70 °C; VGS = 4 V; Figure 2 Tamb = 25 °C; pulsed; tp 10 µs; Figure 3 Tamb = 25 °C; Figure 1 Conditions 25 °C Tj 150 °C Min -55 -55 Max 30 ±15 125 100 250 0.2 +150 +150 125 Unit V V mA mA mA W °C °C mA
Source-drain diode
9397 750 10939
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 27 February 2003
2 of 12
Philips Semiconductors
PMGD8000LN
Dual µTrenchMOSTM logic level FET
120 P der (%) 80
03aa11
120 Ider (%) 80
03aa19
40
40
0 0 50 100 150 200 Tamb (°C)
0 0 50 100 150 200 Tamb (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------ × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of ambient temperature.
Fig 2. Normalized continuous drain current as a function of ambient temperature.
1
03ah13
ID (A)
Limit RDSon = VDS / ID tp = 10 µ s 1 ms
10-1
10 ms DC 10-2
100 ms
10-3 1 10 VDS (V) 102
Tamb = 25 °C; IDM is single pulse; VGS = 4 V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10939
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 27 February 2003
3 of 12

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