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Part: PMK27XP
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> P-Channel
Description: P-channel Extremely Low Level Fet
Company: Philips Semiconductors
Datasheet: Download PMK27XP datasheet File size : 109 kB
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Datasheet text preview:
PMK27XP
P-channel extremely low level FET
M3D315
Rev. 01 -- 15 January 2004
Product data
1. Product profile
1.1 Description
Extremely low level P-channel enhancement mode field-effect transistor in a plastic package using TrenchDMOS technology.
1.2 Features
s Low threshold s Low on-state resistance.
1.3 Applications
s Load switching s Laptop computers s Batter y packs s Batter y powered portable equipment.
1.4 Quick reference data
s VDS -20 V s Ptot 2.5 W s ID -6.5 A s RDSon = 27 m (typ).
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1 (SO-8), simplified outline and symbol Description source (s) gate (g) drain (d)
g 1 Top view 4
MBK187
Simplified outline
8 5
Symbol
d
s
MBB075
SOT 96-1 (SO-8)
3. Ordering information
Table 2: Ordering information Package Name PMK27XP S08 Description Plastic surface mounted package; 8 leads Version SOT96-1 Type number
Philips Semiconductors
PMK27XP
P-channel extremely low level FET
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS ID drain-source voltage (DC) drain current Conditions Tamb = 25 °C VGS = -4.5 V; tp 10s Tamb = 25 °C; Figure 2 Tamb = 70 °C; Figure 2 VGS IDM Ptot Ptot Tstg Tj IS gate-source voltage (DC) peak drain current total power dissipation total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tamb = 25 °C Tamb = 25 °C; pulsed; tp 300 µs; Figure 3 Tamb = 25 °C; tp 10s; Figure 1 -55 -55 -4.6 -3.7 -12 -32 2.5 1.25 +150 +150 -1.7 A A V A W W °C °C A -6.5 -5.2 A A Min Max -20 Unit V
Source-drain diode
9397 750 11549
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 15 January 2004
2 of 11
Philips Semiconductors
PMK27XP
P-channel extremely low level FET
120 P der (%) 80
03an63
120 Ider %
03an62
80
40
40
0 0 50 100 Tamb (°C) 150
0 0 50 100 Tamb °C 150
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of solder point temperature.
Fig 2. Normalized continuous drain current as a function of solder point temperature.
102 ID (-A) 10 tp = 100 µs 1 ms 10 ms 1 DC 100 ms Limit RDSon = VDS / ID
03an64
10-1
10-2 10-1
1
10
VDS (-V)
102
Tamb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11549
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 15 January 2004
3 of 11
Philips Semiconductors
PMK27XP
P-channel extremely low level FET
5. Thermal characteristics
Table 4: Symbol Rth(j-sp) Thermal characteristics Parameter Conditions minimum footprint; mounted on a printed-circuit board steady state tp < 10 s 100 50 K/W K/W Min Typ Max 27 Unit K/W thermal resistance from junction to solder point Figure 4
Rth(j-amb) thermal resistance from junction to ambient
5.1 Transient thermal impedance
1
03an61
a
= 0.5
0.2 10-1
0.1
0.05 P 0.02 Single Pulse 10-2 10-4 tp T 10-2 10-1 102
=
tp T
t
10-3
1
10
tp (s)
103
Z h( j amb) a = ----t--------------------Rt h ( j a m b ) Fig 4. Normalised transient thermal impedance from junction to ambient as a function of pulse duration.
9397 750 11549
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 15 January 2004
4 of 11
Philips Semiconductors
PMK27XP
P-channel extremely low level FET
6. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IGSS RDSon gate-source threshold voltage drain-source leakage current gate-source leakage current drain-source on-state resistance ID = -250 µA; VGS = 0 V ID = -250 µA; VDS = VGS; Figure 9 VGS = 0 V; VDS = -20 V VGS = 0 V; VDS = -16 V; Tj = 70 °C VGS = ±12 V; VDS = 0 V VGS = -4.5 V; ID = -6.5 A; Figure 7 and 8 VGS = -2.5 V; ID = -5 A; Figure 7 and 8 Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = -6.5 A; VGS = 0 V; Figure 11 VDD = -15 V; ID = -6.5 A; VGS = -4.5 V; RG = 6 VGS = 0 V; VDS = -10 V; f = 1 MHz; Figure 10 ID = -6.5 A; VDD = -15 V; VGS = -4.5 V; Figure 12 13.6 2.3 5.5 1 044 273 211 10 35 38 50 -1.5 nC nC nC pF pF pF ns ns ns ns V -20 -0.6 27 46 -1 -5 100 35 60 V V µA µA nA m m Conditions Min Typ Max Unit
Source-drain diode
9397 750 11549
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data
Rev. 01 -- 15 January 2004
5 of 11
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