Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
1/3 page (Datasheet)
M3D054
PMLL4148; PMLL4448 High-speed diodes
Product specification Supersedes data of 1996 Sep 18 1999 May 27
Philips Semiconductors
Product specification
High-speed diodes
FEATURES · Small hermetically sealed glass SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 75 V · Repetitive peak forward current: max. 450 mA. APPLICATIONS · High-speed switching · Fast logic applications.
handbook, 4 columns
PMLL4148; PMLL4448
DESCRIPTION The PMLL4148 and PMLL4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.
k
a
MAM061
The marking band indicates the cathode.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - -65 - 4 1 0.5 500 +200 200 A A A mW °C °C see Fig.2; note 1 CONDITIONS - - - - MIN. MAX. 75 75 200 450 V V mA mA UNIT
1999 May 27
2
Philips Semiconductors
Product specification
High-speed diodes
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage PMLL4148 PMLL4448 IR IR Cd trr reverse current reverse current; PMLL4448 diode capacitance reverse recovery time see Fig.3 IF = 10 mA IF = 5 mA IF = 100 mA VR = 20 V; see Fig.5 CONDITIONS
PMLL4148; PMLL4448
MIN. - 620 - - - 1
MAX. V
UNIT
720 1 25 50 3 4 4
mV V nA µA µA pF ns
VR = 20 V; Tj = 150 °C; see Fig.5 VR = 20 V; Tj = 100 °C; see Fig.5 f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 50 mA; tr = 20 ns; see Fig.8
Vfr
forward recovery voltage
-
2.5
V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 300 350 UNIT K/W K/W
1999 May 27
3
