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Details, datasheet, quote on part number:PMLL4153
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| Part: | PMLL4153 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes |
| Description: | PMLL4150; PMLL4151; PMLL4153; High-speed Diodes;; Package: SOD80C (LLDS) |
| Company: | Philips Semiconductors (Acquired by NXP) |
| Datasheet: | Download PMLL4153 datasheet File size : 44 kB |
| Request For quote: | Find where to buy PMLL4153
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
1/3 page (Datasheet)
M3D054
PMLL4150; PMLL4151; PMLL4153 High-speed diodes
Product specification Supersedes data of April 1996 1996 Sep 18
Philips Semiconductors
Product specification
High-speed diodes
FEATURES · Small hermetically sealed glass SMD package · High switching speed: max. 4 ns · General application · Continuous reverse voltage: max. 50 V · Repetitive peak reverse voltage: max. 75 V · Repetitive peak forward current: max. 600 mA and 450 mA respectively. APPLICATIONS · High-speed switching · The PMLL4150 is primarily intended for general purpose use in computer and industrial applications. · The PMLL4151 and PMLL4153 are intended for military and industrial applications.
handbook, 4 columns
PMLL4150; PMLL4151; PMLL4153
DESCRIPTION The PMLL4150, PMLL4151, PMLL4153 are high-speed switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.
k
a
MAM061
Cathode indicated by black band.
Fig.1 Simplified outline (SOD80C) and symbol.
1996 Sep 18
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Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage PMLL4151 PMLL4153 VR IF continuous reverse voltage continuous forward current PMLL4150 PMLL4151 PMLL4153 IFRM repetitive peak forward current PMLL4150 PMLL4151 PMLL4153 IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - -65 - 4 1 0.5 500 +200 200 A A A mW °C °C - - - 600 450 450 mA mA mA see Fig.2; note 1 - - - 300 200 200 mA mA mA - - - 75 75 50 V V V CONDITIONS MIN. MAX. UNIT
1996 Sep 18
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