|
Details, datasheet, quote on part number:PN4416A
| |
| Part: | PN4416A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => N-Channel => Single |
| Description: | PN4416; PN4416A; N-channel Field-effect Transistor |
| Company: | Philips Semiconductors |
| Datasheet: | Download PN4416A datasheet File size : 72 kB |
| Request For quote: | Find where to buy PN4416A
|
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
PN4416; PN4416A N-channel field-effect transistor
Product specification File under Discrete Semiconductors, SC07 December 1997
Philips Semiconductors
Product specification
N-channel field-effect transistor
FEATURES · Low noise · Interchangeability of drain and source connections · High gain. DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT54 (TO-92). PIN 1 2 3 gate source drain DESCRIPTION IDSS Ptot VGS(off) QUICK REFERENCE DATA SYMBOL VDS PARAMETER drain-source voltage PN4416 PN4416A drain current total power dissipation gate-source cut-off voltage PN4416 PN4416A Yfs common-source transfer admittance
PN4416; PN4416A
CONDITIONS
MIN. MAX. UNIT - - 30 35 15 400 V V mA mW
VDS = 15 V; VGS = 0 5 up to Tamb = 25 °C VDS = 15 V; ID = 1 nA - -2.5 VDS = 15 V; VGS = 0; f = 1 kHz 4.5 -
-6 -6 7.5
V V mS
1 handbook, halfpage 2 3 g
MAM042
d s
Fig.1 Simplified outline and symbol.
December 1997
2
Philips Semiconductors
Product specification
N-channel field-effect transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS PARAMETER drain-source voltage PN4416 PN4416A VGSO gate-source voltage PN4416 PN4416A VGDO gate-drain voltage PN4416 PN4416A IG Ptot Tstg Tj DC forward gate current total power dissipation storage temperature junction temperature up to Tamb = 25 °C (note 1) - - - - - - - - CONDITIONS
PN4416; PN4416A
MIN.
MAX. 30 35 -30 -35 -30 -35 10 400 +150 150 V V V V V V
UNIT
mA mW °C °C
-65 -
THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for drain leads 10 mm2. STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)GSS PN4416 PN4416A IGSS IDSS VGSS VGS(off) reverse gate leakage current drain current gate-source forward voltage gate-source cut-off voltage PN4416 PN4416A Yfs Yos common source transfer admittance common source output admittance PN4416 PN4416A VDS = 15 V; VGS = 0 VDS = 15 V; VGS = 0 - - 50 50 µS µS VDS = 0; VGS = -15 V VDS = 15 V; VGS = 0 VDS = 0; IG = 1 mA VDS = 15 V; ID = 1 nA - -2.5 4.5 -6 -6 7.5 V V mS PARAMETER gate-source breakdown voltage CONDITIONS VDS = 0; IG = -1 µA -30 -35 - 5 - - - -1 15 1 V V nA mA V MIN. MAX. UNIT PARAMETER from junction to ambient (note 1) THERMAL RESISTANCE 350 K/W
December 1997
3
|
|
