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Details, datasheet, quote on part number:PSMN004-25P
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| Part: | PSMN004-25P |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Logic Level TrenchMOS(TM) Transistor |
| Company: | Philips Semiconductors |
| Datasheet: | Download PSMN004-25P datasheet File size : 108 kB |
| Request For quote: | Find where to buy PSMN004-25P
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Datasheet text preview:
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS transistor PSMN004-25B, PSMN004-25P
FEATURES
· 'Trench' technology · Very low on-state resistance · Fast switching · Low thermal resistance
g
SYMBOL
d
QUICK REFERENCE DATA VDSS = 25 V ID = 75 A RDS(ON) 4 m (VGS = 10 V) RDS(ON) 5 m (VGS = 5 V)
s
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. Applications:· d.c. to d.c. converters · switched mode power supplies The PSMN004-25P is supplied in the SOT78 (TO220AB) conventional leaded package. The PSMN004-25B is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab gate drain1 source drain DESCRIPTION
SOT78 (TO220AB)
tab
SOT404 (D2PAK)
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS VGSM ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Continuous gate-source voltage Peak pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 °C to 175°C Tj = 25 °C to 175°C; RGS = 20 k Tj 150 °C Tmb = 25 °C; VGS = 5 V Tmb = 100 °C; VGS = 5 V Tmb = 25 °C Tmb = 25 °C MIN. - 55 MAX. 25 25 ± 16 ± 20 752 752 240 230 175 UNIT V V V V A A A W °C
1 It is not possible to make connection to pin:2 of the SOT404 package 2 maximum continuous current limited by package January 2000 1 Rev 1.200
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS transistor
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS
PSMN004-25B, PSMN004-25P
MIN. -
TYP. MAX. UNIT 60 50 0.65 K/W K/W K/W
SOT78 package, vertical in still air SOT404 package, pcb mounted, minimum footprint
-
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS IAS Non-repetitive avalanche energy Non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 75 A; tp = 100 µs; Tj prior to avalanche = 25°C; VDD 15 V; RGS = 50 ; VGS = 5 V MIN. MAX. 120 75 UNIT mJ A
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55°C VDS = VGS; ID = 1 mA Tj = 175°C Tj = -55°C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A VGS = 4.5 V; ID = 25 A VGS = 5 V; ID = 25 A; Tj = 175°C Gate-source leakage current VGS = ± 10 V; VDS = 0 V; Zero gate voltage drain VDS = 25 V; VGS = 0 V; current Tj = 175°C Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance ID = 75 A; VDD = 15 V; VGS = 5 V MIN. 25 22 1 0.5 TYP. MAX. UNIT 1.5 3.5 4 0.02 0.05 97 20 39 45 220 435 320 3.5 4.5 7.5 6000 1700 1400 2 2.3 4 5 5.4 9.25 100 10 500 V V V V V m m m m nA µA µA nC nC nC ns ns ns ns nH nH nH pF pF pF
IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss
VDD = 15 V; RD = 1.2 VGS = 5 V; RG = 5.6 Resistive load Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad VGS = 0 V; VDS = 20 V; f = 1 MHz
January 2000
2
Rev 1.200
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS transistor
PSMN004-25B, PSMN004-25P
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25°C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 75 A; VGS = 0 V IF = 20 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 25 V TYP. MAX. UNIT 0.85 1.1 400 1 75 240 1.2 A A V ns µC
January 2000
3
Rev 1.200
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