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Details, datasheet, quote on part number:PSMN009-100P
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Datasheet text preview:
PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
Rev. 01 -- 29 April 2002 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in SOT404 (D2-PAK).
2. Features
s Low on-state resistance s Fast switching.
3. Applications
s High frequency computer motherboard DC to DC converters s OR-ing applications.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) drain (d)
g
2 1
MBK106
Simplified outline
[1]
mb mb
Symbol
d
MBB076
s
3
MBK116
123
SOT78 (TO-220AB)
[1]
SOT404 (D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors
PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C Tj 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C Typ 7.5 Max 100 75 230 175 8.8 Unit V A W °C m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs unclamped inductive load; ID = 35 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 °C unclamped inductive load; VDD = 15 V; RGS = 50 ; VGS = 10 V; star ting Tj = 25 °C tp 50 µs; pulsed; duty cycle 25%; T j 150 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pulsed; tp 10 µs; Figure 3 Tmb = 25 °C; Figure 1 Conditions 25 °C Tj 175 °C 25 °C Tj 175 °C; RGS = 20 k Min -55 -55 Max 100 100 ±20 ±30 75 65 400 230 +175 +175 75 400 120 Unit V V V V A A A W °C °C A A mJ
Source-drain diode
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy IDS(AL)S non-repetitive avalanche current
-
75
A
9397 750 09158
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 29 April 2002
2 of 13
Philips Semiconductors
PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
120 P der (%) 80
03aa16
120 Ider (%) 100
03ah99
80
60
40
40
20
0 0 50 100 150 200 Tmb (°C)
0 0 30 60 90 120 150 180 Tmb (°C)
Pt o t P d e r = ---------------------- × 100 % P °
t o t ( 25 C )
ID I d e r = ------------------- × 100 % I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A)
03ai01
Limit RDSon = VDS/ ID
102
tp = 10 µs
100 µs
DC 10
1 ms
10 ms 100 ms
1 1 10 102 VDS (V) 103
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09158
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 29 April 2002
3 of 13
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