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Part: PXT2222A
Category:
Discrete
-> Transistors
-> Bipolar
-> Switching
Description: PXT2222A; NPN Switching Transistor;; Package: SOT89 (MPT3, UPAK)
Company: Philips Semiconductors
Datasheet: Download PXT2222A datasheet File size : 139 kB
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PXT2222A NPN switching transistor
Product specification Supersedes data of 1997 May 05 1999 Apr 14
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES · High current (max. 600 mA) · Low voltage (max. 40 V). APPLICATIONS · General purpose switching and linear amplification. DESCRIPTION NPN switching transistor in a SOT89 plastic package. PNP complement: PXT2907A. MARKING TYPE NUMBER PXT2222A MARKING CODE p1P
1 Bottom view 2 3
handbook, halfpage
PXT2222A
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
2 3 1
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 75 40 6 600 800 200 1.25 +150 150 +150 V V V mA mA mA W °C °C °C UNIT
1999 Apr 14
2
Philips Semiconductors
Product specification
NPN switching transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 100 20
PXT2222A
UNIT K/W K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tamb = 125 °C IC = 0; VBE = 5 V IC = 0.1 mA; VCE = 10V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V IC = 10 mA; VC = 10 V; Tamb = -55 °C IC = 150 mA; VCE = 1 V IC = 150 mA; VCE = 10 V IC = 500 mA; VCE = 10 V VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 500 mV; f = 1 MHz IC = 20 mA; VCE = 10 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz - - - 35 50 75 35 50 100 40 - - 0.6 - - - 300 - MIN. MAX. 10 10 10 - - - - - 300 - 300 1 1.2 2 8 25 - 4 mV V V V pF pF MHz dB UNIT nA µA nA
Switching times (between 10% and 90% levels); (see Fig.2) ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time ICon = 150 mA; IBon = 15 mA; IBoff = -15 mA - - - - - - 35 15 20 250 200 60 ns ns ns ns ns ns
1999 Apr 14
3
Others parts begin by px
PX-1 PX-2
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