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Details, datasheet, quote on part number:PXT2907A
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| Part: | PXT2907A |
| Category: | Discrete => Transistors => Bipolar => Switching |
| Description: | PXT2907A; PNP Switching Transistor;; Package: SOT89 (MPT3, UPAK) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PXT2907A datasheet File size : 50 kB |
| Request For quote: | Find where to buy PXT2907A
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PXT2907A PNP switching transistor
Product specification Supersedes data of 1999 Apr 14 2002 Mar 20
Philips Semiconductors
Product specification
PNP switching transistor
FEATURES · High current (max. 600 mA) · Low voltage (max. 60 V). APPLICATIONS · Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT89 plastic package. NPN complement: PXT2222A. MARKING TYPE NUMBER PXT2907A MARKING CODE p2F
1 Bottom view 2 3
handbook, halfpage
PXT2907A
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
2 3 1
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. -60 -60 -5 -600 -800 -200 1.3 +150 150 +150 V V V mA mA mA W °C °C °C UNIT
2002 Mar 20
2
Philips Semiconductors
Product specification
PNP switching transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 97 17
PXT2907A
UNIT K/W K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = -50 V IE = 0; VCB = -50 V; Tamb = 125 °C IC = 0; VEB = -5 V IC = -0.1 mA; VCE = -1 V IC = -1 mA; VCE = -1 V IC = -10 mA; VCE = -1 V IC = -150 mA; VCE = -2 V IC = -500 mA; VCE = -10 V VCEsat VBEsat Cc Ce fT collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA IE = ie = 0; VCB = -10 V; f = 1 MHz IC = -20 mA; VCE = -10 V; f = 100 MHz ICon = -150 mA; IBon = -15 mA; IBoff = 15 mA - - - 75 100 100 100 50 - - - - - 200 MIN. MAX. -10 -10 -50 - - - 300 - -400 -1.6 -1.3 -2.6 8 35 - mV V V V pF pF MHz UNIT nA µA nA
IC = ic = 0; VEB = -500 mV; f = 1 MHz -
Switching times (between 10% and 90% levels); (see Fig.2) ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time - - - - - - 40 12 30 365 300 65 ns ns ns ns ns ns
2002 Mar 20
3
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