|
Details, datasheet, quote on part number:PXT3904
| |
| Part: | PXT3904 |
| Category: | Discrete => Transistors => Bipolar => Switching |
| Description: | PXT3904; NPN Switching Transistor;; Package: SOT89 (MPT3, UPAK) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PXT3904 datasheet File size : 52 kB |
| Request For quote: | Find where to buy PXT3904
|
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PXT3904 NPN switching transistor
Product specification Supersedes data of 1997 May 05 1999 Apr 14
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES · Low current (max. 100 mA) · Low voltage (max. 40 V). APPLICATIONS · High-speed switching. DESCRIPTION NPN switching transistor in a SOT89 plastic package. PNP complement: PXT3906. MARKING TYPE NUMBER PXT3904 MARKING CODE p1A
1 Bottom view 2 3
MAM296
PXT3904
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
handbook, halfpage
2 3 1
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -55 - -55 MIN. MAX. 60 40 6 100 200 100 1.2 +150 150 +150 V V V mA mA mA W °C °C °C UNIT
1999 Apr 14
2
Philips Semiconductors
Product specification
NPN switching transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 105 25
PXT3904
UNIT K/W K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook". CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; (see Fig.2) IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB = 500 mV; f = 1 MHz IC = 100 µA; VCE = 5 V; RS = 1 k; f = 10 Hz to 15.7 kHz 60 80 100 60 30 - - 650 - - - - - - 300 - - 200 200 850 950 4 8 - 5 mV mV mV mV pF pF MHz dB - - MIN. MAX. 50 50 UNIT nA nA
IC = 10 mA; VCE = 20 V; f = 100 MHz 300
Switching times (between 10% and 90% levels); (see Fig.3) ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA - - - - - - 65 35 35 240 200 50 ns ns ns ns ns ns
1999 Apr 14
3
|
|
