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Details, datasheet, quote on part number:PXTA14
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| Part: | PXTA14 |
| Category: | Discrete => Transistors => Bipolar => Darlington |
| Description: | PXTA14; NPN Darlington Transistor;; Package: SOT89 (MPT3, UPAK) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PXTA14 datasheet File size : 49 kB |
| Request For quote: | Find where to buy PXTA14
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PXTA14 NPN Darlington transistor
Product specification Supersedes data of 1997 Apr 23 1999 Apr 14
Philips Semiconductors
Product specification
NPN Darlington transistor
FEATURES · High current (max. 500 mA) · Low voltage (max. 30 V). APPLICATIONS · High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complement: PXTA64. MARKING TYPE NUMBER PXTA14 MARKING CODE p1N
handbook, halfpage
PXTA14
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
3
2
TR1 TR2 1
MAM300
1 Bottom view
2
3
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for the SOT89 in the General Part of associated Handbook". PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter VBE = 0 open collector - - - - - - - -65 - -65 MIN. MAX. 30 30 10 500 1 200 1.3 +150 150 +150 V V V mA A mA W °C °C °C UNIT
1999 Apr 14
2
Philips Semiconductors
Product specification
NPN Darlington transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to solder point CONDITIONS note 1 VALUE 96 16
PXTA14
UNIT K/W K/W
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see "Thermal considerations for the SOT89 in the General Part of associated Handbook". CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE VCEsat VBEsat VBEon fT PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V VBE = 0; VCE = 30 V IC = 0; VEB = 10 V IC = 10 mA; VCE = 5 V; (see Fig.2) IC = 100 mA; VCE = 5 V; (see Fig.2) collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA base-emitter saturation voltage base-emitter on-state voltage transition frequency IC = 100 mA; IB = 0.1 mA IC = 100 mA; VCE = 5 V IC = 30 mA; VCE = 5 V; f = 100 MHz - - - 10 000 20 000 - - - 125 MIN. MAX. 100 100 100 - - 1.5 1.5 2 - V V V MHz UNIT nA nA nA
1999 Apr 14
3
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