|
Details, datasheet, quote on part number:PZ1721B25U
| |
Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
PZ1418B15U NPN microwave power transistor
Product specification Supersedes data of November 1994 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES · Interdigitated structure provides high emitter efficiency · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR · Gold metallization realizes very stable characteristics and excellent lifetime · Multicell geometry gives good balance of dissipated power and low thermal resistance · Internal input and output prematching ensures good stability and easy broadband use. APPLICATIONS · Common base class-B wideband amplifiers under CW conditions in military and professional applications, and to drive the type PZ1418B30U.
2
handbook, halfpage
PZ1418B15U
PINNING - SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
1
c b
3
e
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.
Top view
MAM314
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a common base class-B wideband amplifier. MODE OF OPERATION Class-B f (GHz) 1.4 to 1.8 VCC (V) 28 PL (W) 12.5 Gp (dB) 7 C (%) 38 Zi; ZL () see Figs 6 and 7
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature Tmb 75 °C CONDITIONS open emitter open base RBE = 0 open collector - - - - - - -65 - - MIN.
PZ1418B15U
MAX. 40 15 35 3 2 27 +200 200 235 V V V V A W
UNIT
°C °C °C
handbook, halfpage
30
MGD969
Ptot (W) 20
10
0 0 50 100 150 200 Tmb (°C)
Fig.2
Power derating curve.
1997 Feb 19
3
|
|
