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Details, datasheet, quote on part number:PZTA56
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| Part: | PZTA56 |
| Category: | Discrete => Transistors => Bipolar => General Purpose => PNP |
| Description: | PZTA56; PNP General Purpose Transistor |
| Company: | Philips Semiconductors |
| Datasheet: | Download PZTA56 datasheet File size : 53 kB |
| Request For quote: | Find where to buy PZTA56
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
PZTA56 PNP general purpose transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 01
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES · Low current (max. 500 mA) · Low voltage (max. 80 V). APPLICATIONS · Telephony and professional communication equipment. DESCRIPTION PNP transistor in a SOT223 plastic package. NPN complement: PZTA06.
handbook, halfpage
PZTA56
PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION
4
2, 4 1 3
1 Top view 2 3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb 25 °C IC = -100 mA; VCE = -1 V IC = -100 mA; VCE = -1 V; f = 100 MHz open emitter open base CONDITIONS - - - - 100 50 MIN. MAX. -80 -80 -1 1.2 - - MHz V V A W UNIT
1997 Apr 01
2
Philips Semiconductors
Product specification
PNP general purpose transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN.
PZTA56
MAX. -80 -80 -5 -500 -1 -200 1.2 +150 150 +150
UNIT V V V mA A mA W °C °C °C
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General part of handbook SC04". THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General part of handbook SC04". CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBE fT PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = -80 V IC = 0; VEB = -5 V IC = -10 mA; VCE = -1 V IC = -100 mA; VCE = -1 V collector-emitter saturation voltage IC = -100 mA; IB = -10 mA base-emitter voltage transition frequency IC = -100 mA; VCE = -1 V IC = -100 mA; VCE = -1 V; f = 100 MHz - - 100 100 - - 50 MIN. MAX. -50 -50 - - -250 -1.2 - mV V MHz UNIT nA nA PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 103 22 UNIT K/W K/W
1997 Apr 01
3
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