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Details, datasheet, quote on part number:PZTA92
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| Part: | PZTA92 |
| Category: | Discrete => Transistors => Bipolar => High Voltage |
| Description: | PZTA92; PNP High-voltage Transistor;; Package: SOT223 (SC-73) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PZTA92 datasheet File size : 49 kB |
| Request For quote: | Find where to buy PZTA92
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZTA92 PNP high-voltage transistor
Product specification Supersedes data of 1997 May 22 1999 Apr 14
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES · Low current (max. 100 mA) · High voltage (max. 300 V). APPLICATIONS · Video equipment · Telephony · Professional communication equipment. DESCRIPTION PNP high-voltage transistor in a SOT223 plastic package. NPN complement: PZTA42.
1 Top view 2 3
MAM288
PZTA92
PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION
handbook, halfpage
4
2, 4 1 3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook". PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. -300 -300 -5 -100 -200 -100 1.2 +150 150 +150 UNIT V V V mA mA mA W °C °C °C
1999 Apr 14
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 104 23
PZTA92
UNIT K/W K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook". CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = -200 V IC = 0; VBE = -5 V IC = -1 mA; VCE = -10 V; note 1 IC = -10 mA; VCE = -10 V; note 1 IC = -30 mA; VCE = -10 V; note 1 VCEsat VBEsat Cc fT Note 1. Pulse test: tp 300 µs; 0.02. collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency IC = -20 mA; IB = -2 mA IC = -20 mA; IB = -2 mA IE = 0; VCB = -20 V; f = 1 MHz IC = -10 mA; VCE = -20 V; f = 100 MHz - - 25 40 25 - - - 50 MIN. MAX. -20 -100 - - - -500 -900 6 - mV mV pF MHz UNIT nA nA
1999 Apr 14
3
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