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Details, datasheet, quote on part number:PZTM1101
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| Part: | PZTM1101 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | PZTM1101; NPN Transistor/schottky-diode Module;; Package: SOT223 (SC-73) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PZTM1101 datasheet File size : 38 kB |
| Request For quote: | Find where to buy PZTM1101
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D087
PZTM1101 NPN transistor/Schottky-diode module
Product specification 1996 May 09
Philips Semiconductors
Product specification
NPN transistor/Schottky-diode module
FEATURES · Low output capacitance · Fast switching time · Integrated Schottky protection diode.
handbook, halfpage
PZTM1101
DESCRIPTION Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102.
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APPLICATIONS · High-speed switching for industrial applications.
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PINNING PIN 1 2 3 4 base emitter collector, cathode Schottky DESCRIPTION anode Schottky
Marking code: TM1101.
1 Top view
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3
MAM236
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Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL NPN transistor VCBO VCES VEBO IC VR IF IF(AV) Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter VBE = 0 open collector - - - - - - - reverse current applied forward current applied Combined device Ptot Tamb Tstg Tj total power dissipation operating ambient temperature storage temperature junction temperature up to Tamb = 25 °C - -55 -55 - 1.2 +150 +150 150 W °C °C °C - - 60 40 6 200 V V V mA PARAMETER CONDITIONS MIN. MAX. UNIT
Schottky barrier diode continuous reverse voltage forward current (DC) average forward current junction temperature 40 1 1 125 150 V A A °C °C
1996 May 09
2
Philips Semiconductors
Product specification
NPN transistor/Schottky-diode module
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL NPN transistor V(BR)CBO V(BR)CES V(BR)EBO ICES IEBO VCEsat collector-base breakdown voltage open emitter; IC = 10 µA; IE = 0; Tamb = -55 to +150 °C; note 1 60 40 6 - - - - - - - - - - - - - 300 40 70 100 30 60 15 PARAMETER CONDITIONS
PZTM1101
MIN.
MAX. - - - 100 50 50 10 200 300 250 350 850 950 1000 1100 4 8 - - - 300 - 500 - 5 31 310 100
UNIT
V V V nA µA nA µA mV mV mV mV mV mV mV mV pF pF MHz
collector-emitter breakdown voltage open base; IC = 1 mA; VBE = 0; Tamb = -55 to +150 °C; note 1 emitter-base breakdown voltage collector-emitter cut-off current emitter-base cut-off current collector-emitter saturation voltage open collector; IE = 10 µA; IC = 0; Tamb = -55 to +150 °C; note 1 VCE = 20 V; VBE = 0 VEB = 6 V; IC = 0 VEB = 6 V; IC = 0; Tamb = -55 to +150 °C note 1 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 3.2 mA
VCE = 20 V; VBE = 0; Tamb = -55 to +150 °C -
VCEsat
collector-emitter saturation voltage
Tamb = -55 to +150 °C; note 1 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 3.2 mA
VBEsat
base-emitter saturation voltage
note 1 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA
VBEsat
base-emitter saturation voltage
Tamb = -55 to +150 °C; note 1 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA
Cob Cib fT hFE
output capacitance input capacitance transition frequency DC current gain
IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 20 V; f = 100 MHz VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 100 mA
hFE
DC current gain
VCE = 1 V; Tamb = -55 to +150 °C; note 1 IC = 10 mA IC = 100 mA
SWITCHING TIMES (see Figs 2 and 3) td tr ts tf delay time rise time storage time fall time 3 VCC = 5 V IC = 50 mA Vi = 0 to 5 V 1 16 110 70 ns ns ns ns
1996 May 09
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