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Details, datasheet, quote on part number:PZTM1102
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| Part: | PZTM1102 |
| Category: | Discrete => Diodes & Rectifiers => Schottky Diodes |
| Description: | PZTM1102; PNP Transistor/schottky-diode Module;; Package: SOT223 (SC-73) |
| Company: | Philips Semiconductors |
| Datasheet: | Download PZTM1102 datasheet File size : 43 kB |
| Request For quote: | Find where to buy PZTM1102
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZTM1102 PNP transistor/Schottky-diode module
Product specification File under Discrete Semiconductors, SC01 1996 May 09
Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
FEATURES · Low output capacitance · Fast switching time · Integrated Schottky protection diode.
handbook, halfpage
PZTM1102
DESCRIPTION Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101.
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APPLICATIONS · High-speed switching for industrial applications.
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PINNING PIN 1 2 3 4 base emitter collector, anode Schottky DESCRIPTION cathode Schottky
Marking code: TM1102.
1 Top view
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3
MAM237
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Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PNP transistor VCBO VCES VEBO IC VR IF IF(AV) P Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter VBE = 0 open collector - - - - - - - up to Tamb = 25 °C; note 1 reverse current applied forward current applied Combined device Ptot Tamb Tstg Tj Notes 1. An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W. 2. It is not allowed to dissipate the total power of 1.2 W in the Schottky die only. total power dissipation operating ambient temperature storage temperature junction temperature up to Tamb = 25 °C; note 2 - -55 -55 - 1.2 +150 +150 150 W °C °C °C - - - -40 -40 -6 -200 V V V mA PARAMETER CONDITIONS MIN. MAX. UNIT
Schottky barrier diode continuous reverse voltage forward current (DC) average forward current power dissipation junction temperature 40 1 1 0.5 125 150 V A A W °C °C
1996 May 09
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Philips Semiconductors
Product specification
PNP transistor/Schottky-diode module
ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL NPN transistor V(BR)CBO V(BR)CES V(BR)EBO ICES IEBO VCEsat collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter cut-off current open emitter; IC = -10 µA; IE = 0; Tamb = -55 to +150 °C; note 1 open base; IC = -1 mA; VBE = 0; Tamb = -55 to +150 °C; note 1 open collector; IE = -10 µA; IC = 0; Tamb = -55 to +150 °C; note 1 VCE = -20 V; VBE = 0 -40 -40 -6 - - - - - - - - - - - - - 250 40 70 100 30 60 15 PARAMETER CONDITIONS MIN.
PZTM1102
MAX. - - - 100 50 50 10 -200 -300 -250 -350 -850 -950 -1.0 -1.1 4.5 10 - - - 300 - 500 - 7 23 380 80
UNIT
V V V nA µA nA µA mV mV mV mV mV mV V V pF pF MHz
VCE = -20 V; VBE = 0; Tamb = -55 to +150 °C - VEB = -6 V; IC = 0; Tamb = -55 to +150 °C
emitter-base cut-off current VEB = -6 V; IC = 0 collector-emitter saturation voltage note 1 IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -3.2 mA Tamb = -55 to +150 °C; note 1 IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -3.2 mA note 1 IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA Tamb = -55 to +150 °C; note 1 IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IE = ie = 0; VCB = -5 V; f = 1 MHz IC = ic = 0; VEB = -0.5 V; f = 1 MHz IC = -10 mA; VCE = -20 V; f = 100 MHz VCE = -1 V; note 1 IC = -0.1 mA IC = -1 mA IC = -10 mA IC = -100 mA
VCEsat
collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
VBEsat
base-emitter saturation voltage
Cob Cib fT hFE
output capacitance input capacitance transition frequency DC current gain
hFE
DC current gain
VCE = -1 V; Tamb = -55 to +150 °C; note 1 IC = -10 mA IC = -100 mA
SWITCHING TIMES (see Figs 2 and 3) td tr ts tf delay time rise time storage time fall time 3 VCC = 5 V IC = 50 mA Vi = 0 to 5 V 3 13 200 50 ns ns ns ns
1996 May 09
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