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Details, datasheet, quote on part number:RZ1214B35Y
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| Part: | RZ1214B35Y |
| Category: | Discrete => Transistors => Bipolar => RF => Power |
| Description: | RZ1214B35Y; NPN Microwave Power Transistor;; Package: SOT443A |
| Company: | Philips Semiconductors |
| Datasheet: | Download RZ1214B35Y datasheet File size : 61 kB |
| Request For quote: | Find where to buy RZ1214B35Y
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Datasheet text preview:
DISCRETE SEMICONDUCTORS
DATA SHEET
RZ1214B35Y NPN microwave power transistor
Product specification Supersedes data of June 1992 1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES · Interdigitated structure provides high emitter efficiency · Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR · Gold metallization realizes very stable characteristics and excellent lifetime · Multicell geometry gives good balance of dissipated power and low thermal resistance · Internal input matching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS · Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band.
2 3
handbook, halfpage
RZ1214B35Y
PINNING - SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
1
c b e
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.
Top view
MAM314
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class-C wideband amplifier. MODE OF OPERATION Class-C; tp = 150 µs; = 5% f (GHz) 1.2 to 1.4 VCC (V) 50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL (W) 35 Gp (dB) 7 C (%) 30 Zi; ZL () see Fig 4
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature at 0.2 mm from the case; t 10 s CONDITIONS open emitter open base RBE = 0 open collector tp 150 µs; 5% Tmb 75 °C; tp 150 µs; 5% - - - - - - -65 - - MIN.
RZ1214B35Y
MAX. 65 15 60 3 3 125 +200 200 235 V V V V A W
UNIT
°C °C °C
handbook, halfpage
150
MGD974
Ptot (W) 100
50
0 0 50 100 150 200 Tmb (°C)
tp = 150 µs; = 5%.
Fig.2
Power derating curve.
1997 Feb 18
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