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Details, datasheet, quote on part number:P282
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| Part: | P282 |
| Category: | RF & Microwaves => Transistors => FETs => VDMOS => Power |
| Description: | Pout W = 5 ;; Freq MHZ = 1000 ;; Gain DB = 10 ;; Theta JC = 10 ;; GM Mho = 0.4 ;; Idsat a = 2.4 ;; Ciss PF = 18 ;; CRSS PF = 2 ;; Coss PF = 12 ;; Die = 2 ;; Style = Single Ended ;; PKG = SO8 |
| Company: | Polyfet RF Devices |
| Datasheet: | Download P282 datasheet File size : 40 kB |
| Request For quote: | Find where to buy P282
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Datasheet text preview:
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
P282
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Single Ended Package Style SO8 HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 15 Watts Junction to Case Thermal Resistance 10 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
1.6 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 10 45 TYP
5WATTS OUTPUT )
MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz Idq = 0.4 A, Vds = 28.0 V, F = 1000 MHz
VSWR
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 1 0.4 2.1 2.4 18 2 12 MIN 65 0.4 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.02 A, Vds = 28.0 V, Vds = 0 V, Ids = 0.04 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds
Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 2 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
P282
POUT VS PIN GRAPH
F282 POUT VS PIN F=1000 MHZ; IDQ=0.2A; Vdd=28v
8 12.00
100
CAPACITANCE VS VOLTAGE
F2A 2 DIE CAPACITANCE
6
Coss
Ciss
4
10.00
10
2
Efficiency =35%
Crss
0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
POUT
8.00 1
GAIN
1 0 5 10 15
V D S IN VOLTS
20
25
30
V d d in Volts
IV CURVE
F 2 A 2 DIE IV CURVE
3 10
ID AND GM VS VGS
F 2 A 2 DIE GM & ID vs VGS
2.5
Id
2 1 1.5
Gm
1 0.1 0.5
0 0 2 4 6 8 10
V D S IN VOLTS
VGS = 2V VGS = 4V VGS = 6V VGS = 8V VGS = 10V VGS 12V
12
14
16
18
20 0.01 0 2 4 6 8 10 12 14 16 18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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