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Part: PHM002
Category:
Communication
-> Wireless
-> Amplifiers
-> Module->200-500 MHz
Description: 10w 225-400 MHZ Power RF Amplifiers
Company: Polyfet RF Devices
Datasheet: Download PHM002 datasheet File size : 89 kB
Request For quote: Find where to buy PHM002
Datasheet text preview:
polyfet rf devices
Pow er RF Amplifiers
Powe r = 10 Watts 250 to 400 M hz Vdd =12.5 Volts Bandwidth = Gain = 10 dB
PHM002
50 ohms Input/Output Impedance
Descri p tion
The PHM002 is a single stage amplifier specifically designed for Military Bandwidth. This amplifier can be used as a final stage for portable radio applications.
Abosolute Maximum Ratings ( T = 25 C)
Parameter DC supply Voltage Input Power Output Power Operating Case Temp. Storage Temp. Symbol Val u e Unit 17 Vds V 4 Pin W 13 Pout W o -20 to +70 Tc C Tstg -30 to +100 o C
o
Electrical Characteristics: ( T = 25 C Zs=Zl=50 ohms. Vdd =1 2 . 5 Volts )
Parameter Symbol Frequency Range BW Output Power Po Power Gain PG Total Efficiency 2nd Harmonics dso Intermod - 2 tone Ip3 Load MismatchTolerance VSWR Min
250 10 10 40 -35
o
Typical
Max
400
10:1
Unit Mhz Watts dB % dBc dBm Rel a tive
Test Conditions 50 ohm load Idq = 0 . 6 Amps @ Pout = 1 0 Watts @ Pout = 1 0 Watts @ Pout = 1 0 W. Freq = 3 2 5 Mhz Freq = 3 2 5 Mhz All Phase Angles
POLYFET RF DEVICES
Rev ision Date
6 /1/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .poly f et.com
PHM002
PHM002
12 10 8 6 4 2 0 0
f=300M z H Idq=0.6 A Vds=12.5 v
Output Power, G in Vs Input Power a .
16
PHM002 Gain, E ficiency, Vs. Frequency f
12.00 80
Gain (dB)
12
8.00 6.00 4.00 2.00 0.00 250 P ut=10W o Vd=12.5v Idq=0.6A 275 300 325 350
Gain Efficiency
60 40 20 0 400
Gain
10 8 6
0.5
1
1.5
2
2.5
Pi n (W)
375
Frequency (MHz)
PHM002 Pout, IM3, IM5 Vs. Pin
40.00 30.00 20.00 10.00 Pout f1=300M z H 0.00 f2=300.1M z H - 10.00 Idq=0.6A - 20.00 IM3 Vds=12. 5V - 30.00 - 40.00 IM5 - 50.00 - 60.00 - 5.00 0.00 5.00 10.00 15.00 20.00 25.00
PHM002
Gain, Efficie nc y Vs. Frequency
14 13 12 11 10 9 8 250 275 300 325 350 375
Fre q u e n c y (MHz)
Pn=1.0W, Vds=12.5V, Idq= .6A i 0
70
Efficiency
60 50 40
Pout (dBm)
Gain
30 20 10 0 400
Pin (dBm)
POLYFET RF DEVICES
Rev ision Date
Efficiency (%)
6 /1/98
Pout
14
10.00
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .poly f et.com
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