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Details, datasheet, quote on part number:SH702
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| Part: | SH702 |
| Category: | RF & Microwaves => Transistors => FETs => VDMOS => Power |
| Description: | Pout W = 90 ;; Freq MHZ = 500 ;; Gain DB = 10 ;; Theta JC = 0.85 ;; GM Mho = 2.4 ;; Idsat a = 14 ;; Ciss PF = 100 ;; CRSS PF = 6 ;; Coss PF = 64 ;; Die = 2+2 ;; Style = Push - Pull ;; PKG = ah ;; = P ;; = a ;; = S |
| Company: | Polyfet RF Devices |
| Datasheet: | Download SH702 datasheet File size : 41 kB |
| Request For quote: | Find where to buy SH702
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Datasheet text preview:
polyfet rf devices
SH702
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 90.0 Watts Push - Pull Package Style AH HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 190 Watts Junction to Case Thermal Resistance o 0.85 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current 11.5 A Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 TYP
90.0 WATTS OUTPUT )
MAX UNITS dB % 10:1 Relative TEST CONDITIONS Idq = 0.80 A, Vds = 28.0 V, F = Idq = 0.80 A, Vds = 28.0 V, F =
500 MHz 500 MHz
VSWR
Idq = 0.80 A, Vds = 28.0 V, F = 500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 2.4 0.50 14.00 100.0 6.0 64.0 MIN 65 2.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 40.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.20 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 5.00 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 07/17/2003
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
SH702
POUT VS PIN GRAPH
S H 7 0 2 F=500MHZ, V D S = 2 8 V , Idq=.8A
110 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8
P IN IN W A T T S
CAPACITANCE VS VOLTAGE
S1A 2 DICE CAPACITANCE
13
1000
12
Efficiency = 55%
Pout
11
Ciss
100
Coss
Gain 1dB compression 80 watts
10
10
9
Crss
1 0 5 10 15 20 25 30
8 10 12 14 16
V D S IN VOLTS
IV CURVE
S1A 2 DE IV I
16 14 12 ID IN AMPS 10 8 6 4 2 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VVDSINVOLTS vg=8v g=6v 14 0 16 18 vg=12v 20
ID & GM VS VGS
100.00
S1A 2 DIE ID & GM Vs VG
Id
Id in amps; Gm in mhos
10.00
1.00
gM
0.10
0
2
4
6 8 Vgs in Volts
10
12
14
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 07/17/2003
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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