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Details, datasheet, quote on part number:SH703
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| Part: | SH703 |
| Category: | RF & Microwaves => Transistors => FETs => VDMOS => Power |
| Description: | Pout W = 130 ;; Freq MHZ = 400 ;; Gain DB = 10 ;; Theta JC = 0.65 ;; GM Mho = 3.6 ;; Idsat a = 21 ;; Ciss PF = 150 ;; CRSS PF = 9 ;; Coss PF = 96 ;; Die = 3+3 ;; Style = Push - Pull ;; PKG = ah ;; = P ;; = a ;; = S |
| Company: | Polyfet RF Devices |
| Datasheet: | Download SH703 datasheet File size : 42 kB |
| Request For quote: | Find where to buy SH703
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Datasheet text preview:
polyfet rf devices
SH703
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 130.0 Watts Push - Pull Package Style AH HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 270 Watts Junction to Case Thermal Resistance o 0.65 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current 16.0 A Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
RF CHARACTERISTICS ( 130.0 WATTS OUTPUT )
SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 55 10:1 TYP MAX UNITS dB % Relative TEST CONDITIONS Idq = 1.20 A, Vds = 28.0 V, F = Idq = 1.20 A, Vds = 28.0 V, F =
400 MHz 400 MHz
VSWR
Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 3.6 0.35 21.00 150.0 9.0 96.0 MIN 65 3.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 60.00 mA, Vgs = 0V Vds = 28.0 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.30 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 7.50 A Vgs = 20V, Vds = 10V Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 07/17/2003
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
SH703
POUT VS PIN GRAPH
S H 7 0 3 P O U T V S P I N F re q = 4 0 0 M H z , V D S = 2 8 V , Id q = . 6 A
1 2 .50 160 140 120 100 80 60 40 20 0 0 5 10 15 20 25
P I N IN W A T T S 1000
CAPACITANCE VS VOLTAGE
S1A 3 DICE CAPACITANCE
1 2 .00
Pout
1 1 .50 1 1 .00 1 0 .50 1 0 .00
100
Ciss Coss
10
Gain E ffic i e n c y = 50%
9 .50 9 .00 8 .50 8 .00
Crss
1 0 5 10 15 20 25 30
V D S IN VOLTS
IV CURVE
S1A 3 DE IV I
25
ID & GM VS VGS
100.00
S1A 3 DIE ID & GM Vs VG
20
Id in amps; Gm in mhos
10.00
Id
ID IN AMPS
15
10
1.00
gM
5
0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6v INVOLTSvg=8v 14 0 16 18 vg=12v 20
0.10
0
2
4
6 8 Vgs in Volts
10
12
14
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 07/17/2003
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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