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Part: BD241F
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: NPN Silicon Power Transistors
Company: Power Innovations
Datasheet: Download BD241F datasheet File size : 137 kB
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Datasheet text preview:
BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS
40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available
B C E
1 2 3 TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BD241D Collector -emitter voltage (RBE = 100 ) BD241E BD241F BD241D Collector -emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES : 1. 2. 3. 4. BD241E BD241F VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Ts tg TL V CE O VCER SYMBOL VALUE 160 180 200 120 140 160 5 3 5 1 40 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT
This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V.
SE PTE MBE R 1981 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PAR AME TER V(BR)CEO Collector-emitter br eakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio IC = 30 mA (see Note 5) VCE = 160 V VCE = 180 V VCE = 200 V VCE = 90 V VEB = VCE = VCE = 5V 4V 4V VBE = 0 VBE = 0 VBE = 0 IB = 0 IC = 0 IC = IC = IC = IC = 1A 3A 3A 3A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 25 5 2.5 1.8 V V TEST CONDITIONS BD241D IB = 0 BD241E BD241F BD241D BD241E BD241F MIN 120 140 160 0.2 0.2 0.2 0.3 1 mA mA mA V TYP MAX UNIT
ICES
ICEO IEBO hF E V CE(sat) VBE hfe
IB = 750 mA VCE = 4V
VCE = 10 V VCE = 10 V
IC = 0.5 A IC = 0.5 A
|hfe |
NOTE S: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PAR AME TER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3.125 62.5 UNIT °C/W °C/W
resistive-load-switching characteristics at 25°C case temperature
PAR AME TER ton toff
TEST CONDITIONS IC = 1 A VBE(off) = -3.7 V IB(on) = 0.1 A RL = 20
MIN IB(off) = -0.1 A tp = 20 µs, dc 2%
TYP 0.3 1
MAX
UNIT µs µs
Tur n-on time Tur n-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
SEPTEMBER 1981 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
1000 VCE = 4 V tp = 300 µs, duty cycle < 2%
TCS631AH
COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 10
TCS631AB
TC = 25°C TC = 80°C
hFE - DC Current Gain
1·0
100
0·1 IC = IC = IC = IC = 0·01 0·1 100 mA 300 mA 1A 3A 1·0 10 100 1000
10 0·01
0·1
1·0
10
IC - Collector Current - A
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT
1·0 VCE = 4 V TC = 25°C VBE - Base-Emitter Voltage - V 0·9
TCS631AC
0·8
0·7
0·6
0·5 0·01
0·1
1·0
10
IC - Collector Current - A
Figure 3.
SE PTE MBE R 1981 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
100
SAS631AH
IC - Collector Current - A
10
tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation
1·0
0·1 BD241D BD241E BD241F 10 100 1000
0·01 1·0
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
50 Ptot - Maximum Power Dissipation - W
TIS631AA
40
30
20
10
0 0 25 50 75 100 125 150 TC - Case Temperature - °C
Figure 5.
4
SEPTEMBER 1981 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD241D, BD241E, BD241F NPN SILICON POWER TRANSISTORS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
ø
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES : A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
SE PTE MBE R 1981 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
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