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Part: BD242C
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: PNP Silicon Power Transistors
Company: Power Innovations
Datasheet: Download BD242C datasheet File size : 137 kB
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Datasheet text preview:
BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the BD241 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BD242 Collector -emitter voltage (RBE = 100 ) BD242A BD242B BD242C BD242 Collector -emitter voltage (IC = -30 mA) BD242A BD242B BD242C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES : 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Ts tg TL V CE O VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 2 32 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT
This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V.
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PAR AME TER Collector-emitter br eakdown voltage TEST CONDITIONS BD242 V(BR)CEO IC = -30 mA (see Note 5) VCE = -55 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = -70 V VCE = -90 V VCE = -115 V ICEO IEBO hF E V CE(sat) VBE hfe VCE = -30 V VCE = -60 V VEB = VCE = VCE = IB = VCE = -5 V -4 V -4 V -0.6 A -4 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = IC = IC = IC = -1 A -3 A -3 A -3 A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 25 10 -1.2 -1.8 V V IB = 0 BD242A BD242B BD242C BD242 BD242A BD242B BD242C BD242/242A BD242B/242C MIN -45 -60 -80 -100 -0.2 -0.2 -0.2 -0.2 -0.3 -0.3 -1 mA mA mA V TYP MAX UNIT
VCE = -10 V VCE = -10 V
IC = -0.5 A IC = -0.5 A
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NOTE S: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PAR AME TER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3.125 62.5 UNIT °C/W °C/W
resistive-load-switching characteristics at 25°C case temperature
PAR AME TER ton toff
TEST CONDITIONS IC = -1 A VBE(off) = 3.7 V IB(on) = -0.1 A RL = 20
MIN IB(off) = 0.1 A tp = 20 µs, dc 2%
TYP 0.2 0.3
MAX
UNIT µs µs
Tur n-on time Tur n-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
1000 VCE = -4 V tp = 300 µs, duty cycle < 2%
TCS632AH
COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V -1 0
TCS632AB
TC = 25°C TC = 80°C
hFE - DC Current Gain
-1·0
100
-0·1 IC = IC = IC = IC = -100 mA -300 mA -1 A -3 A -1·0 -1 0 -100 -1000
10 -0·01
-0·1
-1·0
-1 0
-0·01 -0·1
IC - Collector Current - A
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT
-1 VCE = -4 V TC = 25°C VBE - Base-Emitter Voltage - V -0·9
TCS632AC
-0·8
-0·7
-0·6
-0·5 -0·01
-0·1
-1
-1 0
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
-100
SAS632AD
IC - Collector Current - A
-1 0
tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation
-1·0
-0·1
BD242 BD242A BD242B BD242C -1 0 -100 -1000
-0·01 -1·0
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
50 Ptot - Maximum Power Dissipation - W
TIS631AA
40
30
20
10
0 0 25 50 75 100 125 150 TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
ø
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES : A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
Others parts begin by bd
BD-1 BD-2 BD-3 BD-4 BD-5 BD-6 BD-7 BD-8 BD-9 BD-10 BD-11 BD-12 BD-13
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