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Part: BD243
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: NPN Silicon Power Transistors
Company: Power Innovations
Datasheet: Download BD243 datasheet File size : 130 kB
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Datasheet text preview:
BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the BD244 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BD243 Collector -emitter voltage (RBE = 100 ) BD243A BD243B BD243C BD243 Collector -emitter voltage (IC = 30 mA) BD243A BD243B BD243C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES : 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Ts tg TL V CE O VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT
This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V.
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PAR AME TER Collector-emitter br eakdown voltage TEST CONDITIONS BD243 V(BR)CEO IC = 30 mA (see Note 5) VCE = 55 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = 70 V VCE = 90 V VCE = 115 V ICEO IEBO hF E V CE(sat) VBE hfe VCE = 30 V VCE = 60 V VEB = VCE = VCE = IB = VCE = 5V 4V 4V 1A 4V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = 0.3 A IC = IC = IC = 3A 6A 6A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 30 15 1.5 2 V V IB = 0 BD243A BD243B BD243C BD243 BD243A BD243B BD243C BD243/243A BD243B/243C MIN 45 60 80 100 0.4 0.4 0.4 0.4 0.7 0.7 1 mA mA mA V TYP MAX UNIT
VCE = 10 V VCE = 10 V
IC = 0.5 A IC = 0.5 A
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NOTE S: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PAR AME TER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.92 62.5 UNIT °C/W °C/W
resistive-load-switching characteristics at 25°C case temperature
PAR AME TER ton toff
TEST CONDITIONS IC = 1 A VBE(off) = -3.7 V IB(on) = 0.1 A RL = 20
MIN IB(off) = -0.1 A tp = 20 µs, dc 2%
TYP 0.3 1
MAX
UNIT µs µs
Tur n-on time Tur n-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE = 4 V TC = 25°C tp = 300 µs, duty cycle < 2% hFE - DC Current Gain VCE(sat) - Collector-Emitter Saturation Voltage - V 1000
TCS633AH
COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT
10
TCS633AE
IC = 300 mA IC = 1 A IC = 3 A IC = 6 A 1·0
100
10
0·1
1·0 0·1
1·0 IC - Collector Current - A
10
0·01 0·001
0·01
0·1 IB - Base Current - A
1·0
10
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT
1·2 VCE = 4 V TC = 25°C VBE - Base-Emitter Voltage - V 1·1
TCS633AF
1·0
0·9
0·8
0·7
0·6 0·1
1·0 IC - Collector Current - A
10
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
100
SAS633AD
IC - Collector Current - A
10
tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation
1·0
0·1
BD243 BD243A BD243B BD243C 10 100 1000
0·01 1·0
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C
TIS633AB
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
ø
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES : A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
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