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Part: BDX54B
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
Description: PNP Silicon Power Darlingtons
Company: Power Innovations
Datasheet: Download BDX54B datasheet File size : 192 kB
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Datasheet text preview:
BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C 60 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING BDX54 Collector -base voltage (IE = 0) BDX54A BDX54B BDX54C BDX54 Collector -emitter voltage (IB = 0) BDX54A BDX54B BDX54C Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES : 1. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VEBO IC IB Ptot Ptot Tj Ts tg TA V CE O V CB O SYMBOL VALUE -45 -60 -80 -100 -45 -60 -80 -100 -5 -8 -0.2 60 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT
MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PAR AME TER Collector-emitter br eakdown voltage TEST CONDITIONS BDX54 V(BR)CEO IC = -100 mA IB = 0 ( see Note 3) BDX54A BDX54B BDX54C VCE = -30 V ICEO Collector-emitter cut-off current VCE = -30 V VCE = -40 V VCE = -50 V VCB = -45 V ICBO Collector cut-off current Emitter cut-off current Forward current transfer ratio Base-emitter saturation voltage Collector-emitter saturation voltage Parallel diode forward voltage VCB = -60 V VCB = -80 V VCB = -100 V IEBO hF E VBE(sat) VCE(sat) VEC VEB = VCE = IB = IB = IE = -5 V -3 V -12 mA -12 mA -3 A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -3 A IC = -3 A IC = -3 A IB = 0 ( see Notes 3 and 4) ( see Notes 3 and 4) ( see Notes 3 and 4) 750 -2.5 -2 -2.5 V V V BDX54 BDX54A BDX54B BDX54C BDX54 BDX54A BDX54B BDX54C MIN -45 -60 -80 - 100 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -2 mA mA mA V TYP MA X UNI T
NOTE S: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PAR AME TER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.08 62.5 UNIT °C/W °C/W
resistive-load-switching characteristics at 25°C case temperature
PAR AME TER ton toff
TEST CONDITIONS IC = -3 A VBE(off) = 4.2 V IB(on) = -12 mA RL = 10
MIN IB(off) = 12 mA tp = 20 µs, dc 2%
TYP 1 5
MAX
UNIT µs µs
Tur n-on time Tur n-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 40000
TCS125AG
COLLECTOR -EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
-3·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 -2·5
TCS125AH
hFE - Typical DC Current Gain
TC = -40°C TC = 25°C TC = 100°C 10000
-2·0
-1·5
1000
-1·0
VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 -1·0 IC - Collector Current - A -1 0
-0·5
TC = -40°C TC = 25°C TC = 100°C -1·0 IC - Collector Current - A -1 0
0 -0·5
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
-3·0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40°C TC = 25°C TC = 100°C
TCS125AI
-2·0
-2·5
-1·0
-1·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 IC - Collector Current - A -1 0
Figure 3.
MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
-100
SAS125AD
DC Operation tp = 300 µs, d = 0.1 = 10% IC - Collector Current - A
-1 0
-1·0
BDX54 BDX54A BDX54B BDX54C -0·1 -1·0 -1 0 -100 -1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C
TIS120AB
Figure 5.
4
MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
ø
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES : A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5
Others parts begin by bd
BD-1 BD-2 BD-3 BD-4 BD-5 BD-6 BD-7 BD-8 BD-9 BD-10 BD-11 BD-12 BD-13
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