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Part: BCR08AS-12
Category:
Discrete
-> Thyristors
-> Triacs
Description: Type = Triac ;; Voltage = 600V ;; Current = 0.8A ;; Package = Obsolete
Company: Powerex, Inc.
Datasheet: Download BCR08AS-12 datasheet File size : 162 kB
Request For quote: Find where to buy BCR08AS-12
Datasheet text preview:
MITSUBISHI SEMICONDUCTOR TRIAC
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR08AS
OUTLINE DRAWING
Dimensions in mm
4.4±0.1 1.6±0.2
1.5±0.1
2.5±0.1
1
0.8 MIN
2
3
0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
0 03 0.4 +0..05
· · · ·
IT (RMS) ............ 0.8A VDRM ..... 600V IFGT !, IRGT !, IRGT # .... 5mA IFGT # ............ 10mA
3 1
SOT-89
APPLICATION Hybrid IC, solid state relay, control of household equipment such as electric fan · washing machine, other general purpose control applications
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 (marked "BF") 600 720 Unit V V
3.9±0.3
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj T stg --
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value
Conditions Commercial frequency, sine full wave 360° conduction, Ta=40°C 3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 0.8 8 0.26 1 0.1 6 1 40 ~ +125 40 ~ +125 48
Unit A A A2s W W V A °C °C mg
1. Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # VFGT # IFGT ! IRGT ! IRGT # IFGT # VGD Rth (j-a) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage
4
Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # $ ! Gate trigger current 2 @ # $ Tj=125°C, VD=1/2VDRM Junction to case 3 Tj=125°C
Test conditions Tj=125°C, VDRM applied Tc=25°C, ITM=1.2A, Instantaneous measurement
Min. -- -- --
Typ. -- -- -- -- -- -- -- -- -- -- -- -- --
Max. 1.0 2.0 2.0 2.0 2.0 2.0 5 5 5 10 -- 65 --
Unit mA V V V V V mA mA mA mA V °C / W V/µs
Tj=25°C, VD=6V, RL=6, RG=330
-- -- -- --
Tj=25°C, VD=6V, RL=6, RG=330
-- -- -- 0.1 -- 0.5
2. Measurement using the gate trigger characteristics measurement circuit. 3. Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms (inductive load)
1. Junction temperature Tj=125°C 2. Rate of decay of on-state commutating current (di/dt)c=0.4A/ms 3. Peak off-state voltage VD=400V
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
TIME TIME VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 10
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
101 7 5 4 3 2 Tj = 125°C 100 7 5 4 3 2 101 0 1 2
8
6
4
Tj = 25°C
2 0 100
3
4
5
2 3 4 5 7 10 1
2 3 4 5 7 10 2
ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE IFGT III IFGT I IRGT III IRGT I
GATE VOLTAGE (V)
101 7 5 3 2 100 7 5 3 2
PGM = 1W PG ( A V ) = 0.1W VG T IGM = 1A IFGT I, IRGT I, IRGT III
IFGT III VGD = 0.2V 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA)
GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C)
102 7 5 3 2
VGM = 10V
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE
100 (%)
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C)
103 7 5 4 3 2 102 7 5 4 3 2
TYPICAL EXAMPLE
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TO AMBIENT
VFGT I VFGT III
JUNCTION TO CASE
VRGT I VRGT III
101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER DISSIPATION
ON-STATE POWER DISSIPATION (W)
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE NATURAL CONVECTION RESISTIVE, 120 INDUCTIVE 100 LOADS 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A) 160
2.0
CASE TEMPERATURE (°C)
1.6
1.2
0.8
360° CONDUCTION RESISTIVE, INDUCTIVE LOADS
0.4
0
0
0.4
0.8
1.2
1.6
2.0
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 103 7 5 3 2 102 7 5 3 2 101 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C)
100 (%)
100 (%)
HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C)
LACHING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
100 (%)
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 60 40 20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C)
DISTRIBUTION
+ T2 , G TYPICAL EXAMPLE
LACHING CURRENT (mA)
+ T2 , G + TYPICAL T2 , G EXAMPLE T2 , G + 101 40 0 40
80
120
160
JUNCTION TEMPERATURE (°C)
100 (%)
CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125°C
BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C)
COMMUTATION CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 MINIMUM CHARACTERISTICS VALUE 2 3 TYPICAL EXAMPLE Tj = 125°C IT = 1A = 500µs VD = 200V f = 3Hz III QUADRANT
BREAKOVER VOLTAGE (d v / d t = xV/µs ) BREAKOVER VOLTAGE (d v / d t = 1V/µs )
120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) III QUADRANT I QUADRANT
I QUADRANT
101 101
5 7 100
2
3
5 7 101
RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms)
Mar. 2002
MITSUBISHI SEMICONDUCTOR TRIAC
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2
100 (%)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6
TYPICAL EXAMPLE
GATE TRIGGER CURRENT (t w) GATE TRIGGER CURRENT (DC)
6V V
A RG
6V V
A RG
102 7 IRGT I IRGT III IFGT I 5 IFGT III 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
TEST PROCEDURE 1 6
TEST PROCEDURE 2 6
6V V
A RG
6V V
A RG
GATE CURRENT PULSE WIDTH (µs)
TEST PROCEDURE 3 TEST PROCEDURE 4
Mar. 2002
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