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Details, datasheet, quote on part number:FS10UMA-5A
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| Part: | FS10UMA-5A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | Type = Planar Process=>200V ;; Voltage = 250V ;; Rdson = 520 ;; Package = Obsolete ;; Drive Voltage = N/a |
| Company: | Powerex, Inc. |
| Datasheet: | Download FS10UMA-5A datasheet File size : 25 kB |
| Request For quote: | Find where to buy FS10UMA-5A
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
tion. hange. cifica c al spe ect to t a fins are subj no his is limit ice: T rametric Not e pa Som
P
MIN RELI
ARY
FS10UMA-5A
HIGH-SPEED SWITCHING USE
FS10UMA-5A
OUTLINE DRAWING
10.5MAX.
Dimensions in mm
4.5
3.2 7.0
1.3
16
3.6
12.5MIN.
3.8MAX.
1.0
0.8
2.54
2.54
0.5
2.6
GATE DRAIN SOURCE DRAIN
q 10V DRIVE q VDSS ....... 250V q rDS (ON) (MAX) .... 0.52 q ID ........ 10A
TO-220
APPLICATION CS Switch for CRT Display monitor
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 250 ±20 10 30 10 55 55 ~ +150 55 ~ +150 2.0
4.5MAX.
Unit V V A A A W °C °C g Sep.1998
L = 200µH
Typical value
MITSUBISHI Nch POWER MOSFET
tion. hange. cifica c al spe ect to t a fins are subj no his is limit ice: T rametric Not e pa Som
P
MIN RELI
ARY
FS10UMA-5A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) Parameter Drain-source breakdown voltage
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 250 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.40 2.00 9.0 950 90 25 20 25 150 40 0.95 -- Max. -- ±10 1 4.0 0.52 2.60 -- -- -- -- -- -- -- -- -- 2.27
Unit V µA mA V V S pF pF pF ns ns ns ns V °C/W
Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case
Sep.1998
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