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Details, datasheet, quote on part number:FS10VS-14A
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| Part: | FS10VS-14A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | Type = Planar Process=>200V ;; Voltage = 700V ;; Rdson = 1300 ;; Package = Obsolete ;; Drive Voltage = N/a |
| Company: | Powerex, Inc. |
| Datasheet: | Download FS10VS-14A datasheet File size : 49 kB |
| Request For quote: | Find where to buy FS10VS-14A
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS10VS-14A
HIGH-SPEED SWITCHING USE
FS10VS-14A
OUTLINE DRAWING
r
Dimensions in mm 4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
0.3 3.0 +0.5
1.5MAX.
10.5MAX.
0
+0.3 0
1 5 0.8 0.5
qwe wr
2.6 ± 0.4
q
¡VDSS ........ 700V ¡rDS (ON) (MAX) ....... 1.3 ¡ID ........ 10A
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 700 ±3 0 10 30 150 55 ~ +150
4.5
Unit V V A A W °C °C g
Feb.1999
Typical value
55 ~ +150 1.2
(1 .5 )
MITSUBISHI Nch POWER MOSFET
FS10VS-14A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 700 ±3 0 -- -- 2 -- -- 4.8 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 1.0 5.0 8.0 1380 150 32 25 33 170 55 1.0 -- Max. -- -- ±1 0 1 4 1.3 6.5 -- -- -- -- -- -- -- -- 1.5 0.83
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2
TC = 25°C Single Pulse DC
160
tw = 10ms 100ms 1ms 10ms 100ms
120
80
40
0
0
50
100
150
200
101 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10
TC = 25°C Pulse Test VGS = 20V 10V 5V PD = 150W
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V 10V TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
8
12
5V
6
4.5V
8
PD = 150W
4
4
4V
2
4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
TC = 25°C Pulse Test VGS = 10V
40
ID = 20A
1.6
20V
30
1.2
20
10A
0.8
10
5A
0.4 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20
TC = 25°C VDS = 50V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 VDS = 10V 7 Pulse Test 5
FORWARD TRANSFER ADMITTANCE yfs (S)
TC = 25°C
DRAIN CURRENT ID (A)
16
3 2 100 7 5 3 2
125°C
75°C
12
8
4
0
0
4
8
12
16
20
101 1 10
23
5 7 100
23
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101
VGS = 0V Coss
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5
Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50
Ciss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
3 2
td(off)
102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102
tf tr td(on)
Crss
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Feb.1999
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