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Part: FS2AS-3
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: Type = Trench Gate ;; Voltage = 150V ;; Rdson = 800 ;; Package = Obsolete ;; Drive Voltage = N/a
Company: Powerex, Inc.
Datasheet: Download FS2AS-3 datasheet File size : 170 kB
Request For quote: Find where to buy FS2AS-3
Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS2AS-3
HIGH-SPEED SWITCHING USE
FS2AS-3
OUTLINE DRAWING
6.5 5.0 ± 0.2
Dimensions in mm
r
5.5 ± 0.2
1.5 ± 0.2
0.5 ± 0.1
1.0MAX.
2.3MIN.
10MAX.
1.0
A
0.5 ± 0.2 0.8
0.9MAX.
2.3
2.3
2.3
q
w
e
wr q GATE w DRAIN e SOURCE r DRAIN e
¡10V DRIVE ¡VDSS ........ 150V ¡rDS (ON) (MAX) ....... 0.8 ¡ID ........... 2A ¡Integrated Fast Recovery Diode (TYP.) .... 65ns
q
MP-3
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 150 ±20 2 8 2 2 8 20 55 ~ +150 55 ~ +150 0.26
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS2AS-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss C oss C rss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 150 -- -- 2.0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.59 0.59 3.0 280 60 14 16 8 19 7 1.0 -- 65 Max. -- ±0.1 0.1 4.0 0.80 0.80 -- -- -- -- -- -- -- -- 1.5 6.25 --
Unit V µA mA V V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50
-- -- -- -- -- --
IS = 1A, VGS = 0V Channel to case IS = 2A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 40
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 2 101 7 5 3 2 100 7 5 3 2
DC tw = 10ms
32
24
100ms 1ms 10ms
16
8
0
0
50
100
150
200
101 7 5 TC = 25°C 3 Single Pulse 2 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 2.0
VGS = 20V 10V 6V TC = 25°C Pulse Test 5V
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 5.0
TC = 25°C Pulse Test VGS = 20V 10V 8V 6V
DRAIN CURRENT ID (A)
4.0
DRAIN CURRENT ID (A)
PD = 20W
1.6
3.0
1.2
2.0
5V
0.8
1.0
0.4
4V
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2AS-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0
TC = 25°C Pulse Test VGS = 10V
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
4.0
0.8
3.0
0.6
20V
2.0
ID = 3A 2A
0.4
1.0
1A
0.2 0 102 2 3 5 7101 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 VDS = 10V 7 Pulse Test 5 4 3 2 100 7 5 4 3 2
DRAIN CURRENT ID (A)
6
4
FORWARD TRANSFER ADMITTANCE yfs (S)
8
2
TC = 25°C 75°C 125°C
0
0
4
8
12
16
20
101 1 10
2 3 4 5 7 100
2 3 4 5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2
Tch = 25°C
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 tf 7 5 td(off) 3 2 td(on) 101 7 5 3 2 100 1 10
tr Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50
103 f = 1MHZ
Ciss
102 7 5 3 2 101 7 5 3 2
Coss
Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
7 VGS = 0V 5 3 2
2 3 4 5 7 100
2 3 4 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
Others parts begin by fs
FS-1 FS-2 FS-3 FS-4 FS-5 FS-6 FS-7 FS-8 FS-9 FS-10 FS-11 FS-12 FS-13
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