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Part: FS2KM-12
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: Type = Planar Process=>200V ;; Voltage = 600V ;; Rdson = 6400 ;; Package = Obsolete ;; Drive Voltage = N/a
Company: Powerex, Inc.
Datasheet: Download FS2KM-12 datasheet File size : 170 kB
Request For quote: Find where to buy FS2KM-12
Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS2KM-12
HIGH-SPEED SWITCHING USE
FS2KM-12
OUTLINE DRAWING
10 ± 0.3 6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25 4.5 ± 0.2 q GATE w DRAIN e SOURCE
123 2.6 ± 0.2
w
¡VDSS ........ 600V ¡rDS (ON) (MAX) ....... 6.4 ¡ID ........... 2A ¡Viso ........ 2000V
q
e
TO-220FN
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg V iso --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 600 ±3 0 2 6 30 55 ~ +150 55 ~ +150 2000 2.0
Unit V V A A W °C °C Vrms g
Feb.1999
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FS2KM-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 ±3 0 -- -- 2 -- -- 0.8 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 5.0 5.0 1.3 300 30 5 13 10 30 30 1.5 -- Max. -- -- ±1 0 1 4 6.4 6.4 -- -- -- -- -- -- -- -- 2.0 4.17
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50
IS = 1A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 101 7 5 3 2 102 tw=10µs 100µs 1ms 10ms DC
40
30
20
10
TC = 25°C Single Pulse
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V TC = 25°C 6V 8V Pulse Test PD = 30W
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 5 PD = 30W TC = 25°C Pulse Test VGS = 20V 10V 8V 6V 2 2.0
DRAIN CURRENT ID (A)
4
DRAIN CURRENT ID (A)
1.6
3
1.2
0.8 5V 0.4
1 5V 0 0 10 20 30 40 50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KM-12
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () TC=25°C Pulse Test 32 ID=3A 24 10 TC=25°C Pulse Test 8 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) VGS=10V 20V
6
16
2A
4
8
1A
2 0 102 2 3 5 7 101 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10 TC = 25°C VDS = 50V Pulse Test 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
8
6
TC = 25°C 100 7 5 3 2 101 1 10 23 5 7 10 0 23 5 7 10 1
4
125°C
75°C
2
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 3 2 102 7 5 3 2 Coss 5 Ciss SWITCHING TIME (ns) 3 2
SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50
CAPACITANCE Ciss, Coss, Crss (pF)
tf 102 7 5 3 2 101 7 5 101
td(off)
101 7 5 Tch=25°C Crss f=1MHz 3 VGS=0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V)
td(on) tr
23
5 7 10 0
23
5 7 10 1
DRAIN CURRENT ID (A)
Feb.1999
Others parts begin by fs
FS-1 FS-2 FS-3 FS-4 FS-5 FS-6 FS-7 FS-8 FS-9 FS-10 FS-11 FS-12 FS-13
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