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Details, datasheet, quote on part number:FS2UM-14A
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| Part: | FS2UM-14A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | Type = Planar Process=>200V ;; Voltage = 700V ;; Rdson = 9750 ;; Package = Obsolete ;; Drive Voltage = N/a |
| Company: | Powerex, Inc. |
| Datasheet: | Download FS2UM-14A datasheet File size : 48 kB |
| Request For quote: | Find where to buy FS2UM-14A
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS2UM-14A
HIGH-SPEED SWITCHING USE
FS2UM-14A
OUTLINE DRAWING
10.5MAX. r 3.2 7.0
Dimensions in mm
4.5 1.3
16
3.6 3.8MAX. 1.0
12.5MIN.
0.8
2.54
2.54 4.5MAX.
0.5
2.6
qwe
wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS ........ 700V ¡rDS (ON) (MAX) ..... 9.75 ¡ID ........... 2A
TO-220
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 700 ±3 0 2 6 65 55 ~ +150
Unit V V A A W °C °C g
Feb.1999
Typical value
55 ~ +150 2
MITSUBISHI Nch POWER MOSFET
FS2UM-14A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 700 ±3 0 -- -- 2 -- -- 0.72 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 7.47 7.47 1.2 270 30 5 10 12 33 21 1.0 -- Max. -- -- ±1 0 1 4 9.75 9.75 -- -- -- -- -- -- -- -- 1.5 1.92
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50 IS = 1A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 101 7 5 3 2
DC TC = 25°C Single Pulse tw = 10ms
80
100ms 1ms 10ms 100ms
60
40
20
0
0
50
100
150
200
102 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 2.0
TC = 25°C Pulse Test VGS = 20V 10V
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 5
PD = 65W TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
4
VGS = 20V 10V
DRAIN CURRENT ID (A)
1.6
5V
3
1.2
2
5V
0.8
4.5V
1
4V
0.4
4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2UM-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 20 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
TC = 25°C Pulse Test VGS = 10V
40
ID = 3A
16
20V
30
12
20
2A
8
10
1A
4 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 5
TC = 25°C VDS = 50V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 100 7 5 3 2
125°C 75°C TC = 25°C VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
4
3
2
1
0
0
4
8
12
16
20
101 1 10
23
5 7 100
23
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 Tch = 25°C 2 f = 1MHZ 100
VGS = 0V
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 1 10 2 3 4 5 7 100
Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50
Ciss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
td(off) tr tf td(on)
Coss
Crss
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V)
2 3 4 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
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