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Details, datasheet, quote on part number:FS50SMJ-3
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| Part: | FS50SMJ-3 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | Type = Trench Gate ;; Voltage = 150V ;; Rdson = 30 ;; Package = Obsolete ;; Drive Voltage = 4 |
| Company: | Powerex, Inc. |
| Datasheet: | Download FS50SMJ-3 datasheet File size : 48 kB |
| Request For quote: | Find where to buy FS50SMJ-3
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS50SMJ-3
HIGH-SPEED SWITCHING USE
FS50SMJ-3
OUTLINE DRAWING
15.9MAX.
Dimensions in mm 4.5
1.5 r
5.0
f 3.2
2
2
19.5MIN.
4
20.0
4.4
G
0.6 2.8
1.0 q 5.45 w e 5.45
4 wr
¡4V DRIVE ¡VDSS ........ 150V ¡rDS (ON) (MAX) ..... 30m ¡ID ........ 50A ¡Integrated Fast Recovery Diode (TYP.) .. 125ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-3P
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 150 ± 20 50 200 50 50 200 150 55 ~ +150 55 ~ +150 4.8
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS50SMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss C oss C rss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 150 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 23 24 0.58 62 8200 870 440 54 110 850 340 1.0 -- 125 Max. -- ±0.1 0.1 2.0 30 32 0.75 -- -- -- -- -- -- -- -- 1.5 0.83 --
Unit V µA mA V m m V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200 MAXIMUM SAFE OPERATING AREA 3 2
POWER DISSIPATION PD (W)
160
DRAIN CURRENT ID (A)
120
102 7 5 3 2 101 7 5 3 2
tw = 10ms
100ms 1ms
80
10ms
40
100
0
0
50
100
150
200
DC 7 TC = 25°C 5 Single Pulse 30 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 10V 5V 4V TC = 25°C Pulse Test
DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 10V 5V 4V 3V
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
40
60
3V
30
40
PD = 150W
20
2.5V
20
10
TC = 25°C Pulse Test
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
ID = 100A
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40
TC = 25°C Pulse Test
1.6
80A
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
32
1.2
50A
24
VGS = 4V 10V
0.8
16
0.4
TC = 25°C Pulse Test
20A
8 0
0
0
2
4
6
8
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2
VDS = 10V Pulse Test TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
60
40
20
FORWARD TRANSFER ADMITTANCE yfs (S)
80
0
0
2
4
6
8
10
100
100
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2
Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 10 23
td(off) tf Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50
Coss
103 7 5 3 2
Crss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
tr td(on)
102 7 Tch = 25°C 5 f = 1MHZ 3 VGS = 0V 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
5 7 101
23
5 7 102
DRAIN CURRENT ID (A)
Feb.1999
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