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Details, datasheet, quote on part number:FS50UMJ-2
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| Part: | FS50UMJ-2 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | Type = Trench Gate ;; Voltage = 100V ;; Rdson = 48 ;; Package = Obsolete ;; Drive Voltage = 4 |
| Company: | Powerex, Inc. |
| Datasheet: | Download FS50UMJ-2 datasheet File size : 47 kB |
| Request For quote: | Find where to buy FS50UMJ-2
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS50UMJ-2
HIGH-SPEED SWITCHING USE
FS50UMJ-2
OUTLINE DRAWING
10.5MAX. r
Dimensions in mm
4.5 1.3
3.2
16
12.5MIN.
3.8MAX.
1.0
7.0
f 3.6
0.8
D
0.5 2.6
2.54
2.54
qwe
wr q GATE w DRAIN e SOURCE r DRAIN e
¡4V DRIVE ¡VDSS ........ 100V ¡rDS (ON) (MAX) ..... 48m ¡ID ........ 50A ¡Integrated Fast Recovery Diode (TYP.) .... 90ns
q
TO-220
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 100 ± 20 50 200 50 50 200 70 55 ~ +150 55 ~ +150 2.0
4.5MAX.
Unit V V A A A A A W °C °C g
Feb.1999
L = 50µH
MITSUBISHI Nch POWER MOSFET
FS50UMJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss C oss C rss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 100 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 37 40 0.93 40 3000 410 210 22 65 270 160 1.0 -- 90 Max. -- ±0.1 0.1 2.0 48 52 1.20 -- -- -- -- -- -- -- -- 1.5 1.78 --
Unit V µA mA V m m V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 50V, ID = 25A, VGS = 10V, RGEN = RGS = 50
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3
TC = 25°C Single Pulse DC
80
tw = 10ms 100ms
60
40
1ms 10ms 100ms
20
0
0
50
100
150
200
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 10V 5V TC = 25°C Pulse Test 4V
50
VGS = 10V
5V 3.5V
TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
40
3V
60
30
40
3V
20
PD = 70W
20
PD = 70W
10
2.5V
0
0
2
4
6
8
10
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50UMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
TC = 25°C Pulse Test
4
80
3
ID = 80A
60
VGS = 4V 10V
2
50A
40
1
20A
20 0
0
0
2
4
6
8
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2
TC = 25°C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
80
60
75°C 125°C
40
20
0
0
2
4
6
8
10
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2
Tch = 25°C
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2
tf Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50
104 VGS = 0V
CAPACITANCE Ciss, Coss, Crss (pF)
Ciss
103 7 5 3 2 102 7 5 3 2
SWITCHING TIME (ns)
7 f = 1MHZ 5 3 2
td(off)
Coss Crss
102 7 5 4 3 2
tr td(on)
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
101
100
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
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