Details, datasheet, quote on part number: FX30KMJ-3
PartFX30KMJ-3
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
DescriptionType = P-channel ;; Voltage = -150V ;; Rdson = 100 ;; Package = Obsolete ;; Drive Voltage = 4
CompanyPowerex, Inc.
DatasheetDownload FX30KMJ-3 datasheet
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Features, Applications

4V DRIVE VDSS............................................................. ­150V rDS (ON) (MAX).............................................. 100m ID.................................................................... ­30A Integrated Fast Recovery Diode (TYP.).........100ns Viso................................................................................ 2000V

APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V

Drain current (Pulsed) Avalanche drain current (Pulsed) = 30µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight

Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter

Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time

POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA



FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102


 

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