|
Details, datasheet, quote on part number:FY10AAJ-03A
| |
| Part: | FY10AAJ-03A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs |
| Description: | Type = Trench Gate Single ;; Voltage = 30V ;; Rdson = 13 ;; Package = Obsolete ;; Drive Voltage = 4 |
| Company: | Powerex, Inc. |
| Datasheet: | Download FY10AAJ-03A datasheet File size : 44 kB |
| Request For quote: | Find where to buy FY10AAJ-03A
|
| |
Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
FY10AAJ-03A
OUTLINE DRAWING
Dimensions in mm
6 .0 4 .4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN
q 4V DRIVE q VDSS .......... 30V q rDS (ON) (MAX) .......... 13.5m q ID ........ 10A
SOP-8
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 30 ±20 10 70 10 2.3 9.2 2.0 55 ~ +150 55 ~ +150 0.07
Unit V V A A A A A W °C °C g Sep.1998
L = 10µH
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-a) trr Parameter Drain-source breakdown voltage
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 5A, VGS = 4V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 30 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 9.5 15 0.095 20 1800 650 280 25 45 125 90 0.75 -- 45 Max. -- ±0.1 0.1 2.0 13.5 20.0 0.135 -- -- -- -- -- -- -- -- 1.10 62.5 --
Unit V µA mA V m m V S pF pF pF ns ns ns ns V °C/W ns
Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 15V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 2.3A, VGS = 0V Channel to ambient IS = 2.3A, dis/dt = 50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 2.5 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
2
102 2.0
7 5 3 2 7 5 3 2 7 5 3 2 tw = 100µs 1ms 10ms 100ms
101
1.5
1.0
100
0.5
101
7 5 3 2 TC = 25°C Single Pulse
DC
0
0
50
100
150
200
2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 50
4V
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 10V 8V 6V 4V 3.5V TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
40
30
VGS = 10V 8V 6V
TC = 25°C Pulse Test 3.5V
DRAIN CURRENT ID (A)
16
12
3V
20
3V
8
10
PD = 2W
4
PD = 2W
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
TC = 25°C Pulse Test
0.8
32
0.6
24
VGS = 4V 10V
0.4
ID = 20A 10A
16
0.2
5A
8 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 50
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102
VDS = 10V 7 Pulse Test 5 4 3 2 TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
30
FORWARD TRANSFER ADMITTANCE yfs (S)
40
101
7 5 4 3 2
20
10
0
0
2
4
6
8
10
100 0 10
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 3 2
SWITCHING CHARACTERISTICS (TYPICAL) 104
7 5 4 3 2 td(off)
103
7 5 3 2
Coss Crss
SWITCHING TIME (ns)
Ciss
CAPACITANCE Ciss, Coss, Crss (pF)
103 tf
7 5 4 3 tr 2 td(on)
102
7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V
101 1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V)
102 0 10
TCh = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50 2 3 4 5 7 101 2 3 4 5 7 102
DRAIN CURRENT ID (A) Sep.1998
|
|
