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Details, datasheet, quote on part number:QID0660009
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| Part: | QID0660009 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules |
| Description: | Type = Igbt Module ;; Voltage = 600V ;; Current = 600A ;; Circuit Configuration = Dual ;; Recommended For Designs = ;; Switching Loss Curves = |
| Company: | Powerex, Inc. |
| Datasheet: | Download QID0660009 datasheet File size : 129 kB |
| Request For quote: | Find where to buy QID0660009
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Datasheet text preview:
QID0660009
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual IGBT Module 600 Amperes / 600 Volts
Description:
Powerex Dual IGBT Module is designed specially for customer applications.
Features:
Low Drive Requirement Low VCE(sat) Super Fast Diode (4) H Series 150A 600V Chips per IGBT Switch (6) H Series 100A 600V Chips per Diode Copper Base Plate Low Thermal Resistance Aluminum Nitride DBC Ceramic
Dim Inches Millimeters A 4.19 106.4 B 2.42 61.4 C 1.30 33.0 D Welding Power Supplies 0.26 6.6 E 3.66 93.0 F 0.26 6.7 G 1.89 48.0 H 0.05 1.20 J 0.74 18.7 K 1.10 27.9 L 0.41 10.5 M 0.24 6.0 N 0.59 15.0 P 0.54 13.6
Dim Q R S T U V W X Y Z AA BB CC
Inches 0.63 3.11 1.34 0.94 0.25 0.11 1.29 0.31 1.00 1.26 0.20 0.256 Dia. 6 Hex Nut
Millimeters 16.0 79.0 34.0 24.0 6.4 2.8 32.7 7.8 25.5 32.0 0.5 6.5 Dia. 6 Hex Nut
Preliminary
Page 1
6/9/2003
QID0660009
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Dual IGBT Module 600 Amperes / 600 Volts
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings Collector Emitter Voltage Gate Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Junction Temperature Storage Temperature Mounting Torque, M6 Terminal Screws Mounting Torque, M6 Mounting Screws Module Weight (Typical) V Isolation Symbol VCES VGES IC I CM IF I FM Pd Tj Tstg VRMS QID0660009 600 ±20 600 1200* 600 1200* 1670 -55 to 150 -55 to 125 26 26 460 1800 Units Volts Volts Amperes Amperes Amperes Amperes Watts °C °C In-lb In-lb Grams Volts
*Pulse width and repetition rate should be such that device junction temperature does not exceed device rating.
Static Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic Collector Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) V CE(s at) Test Conditions VCE=VCES VGE=0V VGE=VGES VCE=0V IC=60mA, VCE=10V IC=600A, VGE=15V IC=600A, VGE=15V, Tj=150°C Total Gate Charge Diode Forward Voltage QG V FM V CC = 6 0 0 V , IC=600A, VGS=15V IE=600A, VGS=0V Min. 4.5 Typ. 6.0 2.1 2.15 1800 Max. 1.0 0.5 7.5 2.8* 2.8 Units mA µA Volts Volts Volts nC Volts
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn- off Delay Time Fall Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol Cies Coes Cres td(on) tr td(off) tf t rr Qr r Test Conditions VGE=0V VCE=10V f=1MHz V CC = 3 0 0 V IC = 6 0 0 A VGE1=VGE2=15V RG=1.0 IF = 6 0 0 A diF/dt=-1200A/µS Min. Typ. 1.62 Max. 60 21 12 350 700 350 300 110 Units nF nF ns ns ns ns ns ns µC
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance (Thermal Grease Applied) Symbol RJC RJC RCF Test Conditions Per IGBT Per Diode Per Module Min. Typ. Max. 0.06 0.12 0.04 Units °C/W °C/W °C/W
Preliminary
Page 2
6/9/2003
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