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Part: QIP0640001
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT Modules
Description: Type = Igbt Module ;; Voltage = 600V ;; Current = 400A ;; Circuit Configuration = Asymmetrical Half Bridge ;; Recommended For Designs = ;; Switching Loss Curves =
Company: Powerex, Inc.
Datasheet: Download QIP0640001 datasheet File size : 514 kB
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Datasheet text preview:
QIP0640001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272 Asymmetrical Half Bridge IGBT H-Series Hermetic Module 400 Amperes/600 Volts
Hermetic Package TBD
Description:
Powerex IGBT Hermetic modules are designed for use in switching applications. Each Module consists of two IGBT transistors, four super fast free wheel diodes in an asymmetrical half bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. All components are located in a hermetically sealed chamber and are electrically isolated from the heat sinking base plate, offering simplified system assembly and thermal management.
Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (70ns) Free-Wheel Diode Isolated Base plate for Easy Heat sinking Fully Hermetic Package Package Design Capable of Use at High Altitudes Package can be modified to adhere to customer dimensions. High Capacity Diodes (D1 & D3) Schematic:
D1
D4
D2
D3
Applications: AC Motor Control Motion/Servo Control Air Craft Applications Ordering Information:
Page 1
PRELIMINARY
06/06/97
QIP0640001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272 Asymmetrical Half Bridge IGBT H-Series Hermetic Module 400 Amperes/600 Volts
Contact Powerex Custom Modules
Page 2
PRELIMINARY
06/06/97
QIP0640001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272 Asymmetrical Half Bridge IGBT H-Series Hermetic Module 400 Amperes/600 Volts
Maximum Ratings, Tj=25°C unless otherwise specified °
Ratings Collector Emitter Voltage Gate Emitter Voltage Collector Current Peak Collector Current Diode Forward Current (D2,D4) Diode Forward Surge Current (D2,D4) Diode Forward Current (D1,D3) V Isolation Symbol VCES VGES IC ICM IFM IFM IFM VRMS 600 ±20 400 800* 400 800* 400 2500 Units Volts Volts Amperes Amperes Amperes Amperes Amperes Volts
Static Electrical Characteristics, Tj=25°C unless otherwise specified °
Characteristic Collector Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol IC E S IGES VGE(th) VCE(sat) VCE(sat) Test Conditions VCE=VCES VCE=0V IC=40mA, VCE=10V IC=400A, VGE=15V IC=400A, VGE=15V, Tj=150°C VCC=300V, IC=400A, VGS=15V IE = 4 0 0 A , VGS=0V IE = 2 0 0 A , VGS=0V Min Typ Max 1.0 0.5 7.5 2.8 Units mA µA Volts Volts Volts
4.5
6.0 2.1 2.15
Total Gate Charge
QG
1200
nC
Diode Forward Voltage (D1,D3) Diode Forward Voltage (D2,D4)
VFM VFM
2.0 2.8
Volts Volts
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified °
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn off delay time Fall Time Diode Reverse Recovery (D1,D3) Diode reverse Recovery Charge (D1, D3) Diode Reverse Recovery (D2, D4) Diode reverse Recovery Charge (D2,D4) Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr trr Qrr Test Conditions VGE=0V VCE=10V f=1MHz VCC=300V IC=200A VGE1=VGE2=15 V RG=1.6 IE=400A diE /dt=400A/µS IE=200A diE /dt=400A/µS Min Typ Max 40 14 8 350 600 350 300 400 80 110 1.08 Units nF nF nF nS nS nS nS nS µC nS µC
Page 3
PRELIMINARY
06/06/97
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