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Details, datasheet, quote on part number:QIS0660001
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| Part: | QIS0660001 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) |
| Description: | Low Side Chopper Igbt Module 600v 450a Igbt / 600v 450a Fast Diode |
| Company: | Powerex, Inc. |
| Datasheet: | Download QIS0660001 datasheet File size : 80 kB |
| Request For quote: | Find where to buy QIS0660001
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Datasheet text preview:
QIQ0645002
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
Description:
Powerex Low Side Chopper IGBT Module designed specially for customer applications. The modules are isolated for easy mounting with other components on a common heatsink.
Features:
Low Drive Requirement Low VCE(sat) Super Fast Diode (3) F Series 150A 600V Chips per IGBT Switch (6) F Series 150A 600V Chips per Diode Isolated Baseplate for Easy Heat Sinking Low Thermal Impedance Isolated Material: DBC Alumina
Dim Inches Millimeters A 4.25 108.0 B 2.44 62.0 C 1.14+0.04/-0.02 29+1.0/-0.5 D 3.66±0.01 93.0±0.25 E 1.88±0.01 48.0±0.25 F 0.67 17.0 Welding Power Supplies G 0.16 4.0 H 0.24 6.0 J 0.59 15.0
Dim K L M N P Q R S T
Inches 0.55 0.87 0.33 0.10 0.85 0.98 0.11 0.25 Dia. 0.6
Millimeters 14.0 22.0 8.5 2.5 21.5 25.0 2.8 6.5 Dia. 15.15
Applications:
Choppers Welding Power Supplies
Preliminary
Page 1
7/25/2002
QIQ0645002
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
Maximum Ratings, Tj=25°C unless otherwise specified °
Ratings Collector Emitter Voltage Gate Emitter Voltage Collector Current (TC=25°C) Peak Collector Current (Tj150°C) Diode Average Forward Current Peak Diode Forward Current Diode I2t for Fusing for One Cycle t=8.3mS Power Dissipation Junction Temperature Storage Temperature Mounting Torque, M6 Terminal Screws Mounting Torque, M6 Mounting Screws Module Weight (Typical) V Isolation 180° Conduction, TC=70°C Symbol VCES V GES IC ICM IFM IFM I2t Pd Tj Tstg VRMS QIQ0645002 600 ±20 450 900* 450 1800 121500 1650 -40 to 150 -40 to 125 40 40 400 2000 Units Volts Volts Amperes Amperes Amperes Amperes A2sec Watts °C °C In-lb In-lb Grams Volts
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Static Electrical Characteristics, Tj=25°C unless otherwise specified °
Characteristic Collector Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES I GES VGE(th) VCE(sat) Test Conditions VCE=VCES VGE=0V VGE=VGES VCE=0V IC=45mA, VCE=10V IC=450A, VGE=15V IC=450A, VGE=15V, Tj=125°C Total Gate Charge Diode Forward Voltage QG VFM VCC=300V, IC=450A, VGE=15V IF=900A IF=450A IF=300A Min. 5.0 Typ. 6.0 1.6 1.6 2790 2.0 1.7 1.3 Max. 1.0 60 7.0 2.2 2.6 Units mA µA Volts Volts Volts nC Volts Volts Volts
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified °
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay time Rise Time Turn- off Delay Time Fall Time Diode Reverse Recovery Time Diode Reverse Recovery Charge Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr Test Conditions VGE=0V VCE=10V f=1MHz VCC=300V IC=450A VGE1=VGE2=15V RG=4.2 IF=900A diF/dt=-1800A/µS Min. Typ. 8.4 Max. 123 8.1 4.5 TBD TBD TBD TBD 150 Units nF nF ns ns ns ns ns ns µC
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified °
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance (Thermal Grease Applied) Symbol RJC RJC RCF Test Conditions Per IGBT Per Diode Per Module Min. Typ. 0.10 0.085 0.02 Max. TBD TBD Units °C/W °C/W °C/W
Preliminary
Page 2
7/25/2002
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