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Part: TCAQ28340HDH
Category:
Discrete
-> Thyristors
-> PCT (Phase Control Thyristors)
Description: Style = Phase Control ;; Type = Disc / Hockey Puk ;; Voltage = 2800V ;; Current = 3400A ;; Circuit Configuration = Single
Company: Powerex, Inc.
Datasheet: Download TCAQ28340HDH datasheet File size : 373 kB
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Datasheet text preview:
24'.+/+0#4;
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724)925-7272
TCAQ__34
Phase Control Thyristor
3400 Amperes 2800 Volts
The TCAQ is a high voltage, high current disc pack SCR employing a high di/dt gate structure. This gate design allows the SCR to be reliably operated at high di/dt and dv/dt conditions in various phase control applications.
FEATURES: Low On-State Voltage High di/dt Capability High dv/dt Capability Hermetic Ceramic Package Excellent Surge and I2t Ratings
ORDERING INFORMATION Select the complete 12 digit Part Number using the table below. EXAMPLE: TCAQ28340HDH is a 2800V-3400A SCR with 250ma IGT and 12 inch gate and cathode potential leads. Voltage Voltage Current Current PART Rating Code Rating Code Turn-Off Tq Itavg VDRM-VRRM TCAQ 2200 2500 2800 22 25 28 3400 34 0
500us
APPLICATIONS: DC Power Supplies Motor Controls SS Contactors
Gate IGT H
250ma
Leads DH
12"
(typ.)
(max)
Revised: Page 1 of 4
9/26/2002
Absolute Maximum Ratings
Characteristic Repetitive Peak Voltage Average On-State Current, TC=70°C RMS On-State Current, TC=70°C Average On-State Current, TC=54°C RMS On-State Current, TC=54°C Peak One Cycle Surge Current, 60Hz, VR=0V Peak One Cycle Surge Current, 50Hz, VR=0V Fuse Coordination I t, 60Hz Fuse Coordination I2t, 50Hz Critical Rate-of-Rise of On-State Current
Repetitive
2
Symbol VDRM-VRRM
Rating 2800 3400 5341 4100 6440 60,000 56,568 1.50E+07 1.60E+07 300
Units Volts A A A A A A A2s A2s A/us
IT(Avg.) IT(RMS) IT(Avg.) IT(RMS)
ITSM ITSM It I2t di/dt
2
Critical Rate-of-Rise of On-State Current
Non-Repetitive
di/dt PGM PG(avg) Tj TStg.
600 16 5 -40 to+125 -50 to+150 4.6 2.09
A/us Watts Watts °C °C lb Kg lbs Knewtons
Peak Gate Power, 100us Average Gate Power Operating Temperature Storage Temperature Approximate Weight
Mounting Force
9,000 - 12,000 40 - 53
Page 2 of 4
Electrical Characteristics,
Tj=25°C unless otherwise specified
Rating Characteristic Repetitive Peak Forward Leakage Current Repetitive Peak Reverse Leakage Current Peak On-State Voltage VTM Model, Low Level VTM = VO + r·ITM VTM Model, High Level VTM = VO + r·ITM VTM Model, 4-Term VTM= A + B·Ln(ITM) + C·(ITM) + D·(ITM) Turn-On Delay Time Turn-Off Time dv/dt(Crit) Gate Trigger Current Gate Trigger Voltage Peak Reverse Gate Voltage
½
Symbol IDRM IRRM VTM V0
Test Conditions Tj=125°C, VDRM=Rated Tj=125°C, VRRM=Rated Tj=125°C, ITM=3000A Tj=125°C 15% ITM - ·ITM Tj=125°C
min
typ
max 250 250 1.34 0.915 1.40E-04 1.038 1.05E-04 0.150 0.140 0.000115 -0.005
Units ma ma V V
r
V0
V
r
A B C D td tq dv/dt IGT VGT VGRM
·ITM - ITSM
Tj=125°C
15%ITM - ITSM
VD = 0.5·VDRM Gate Drive: 40V - 20 Tj=125°C dv/dt = 20V/us to 80% VDRM Tj=125°C Exp. Waveform VD =80% Rated Tj=25°C VD = 12V 1000 30 0.8
2.5 400
us us V/us
100 2.0
250 4.5 5
ma V V
Thermal Characteristics
Characteristic Thermal Resistance Junction to Case Case to Sink Thermal Impedance Model Symbol Test Conditions Double side cooled Double side cooled Double side cooled where: min Rating typ 0.007 0.0015 max 0.008 0.002 Units °C/Watt °C/Watt
Rjc Rcs Zjc
Zjc(t) =
(A(N)·(1-exp(-t/Tau(N))))
N= A(N) = Tau(N) =
1
1.43E-04 2.62E-03
2
9.08E-04 2.31E-02
3
2.37E-03 5.00E-01
4
4.60E-03 8.00E+00
Page 3 of 4
Others parts begin by tc
TC-1 TC-2 TC-3 TC-4 TC-5 TC-6 TC-7 TC-8 TC-9 TC-10 TC-11 TC-12 TC-13 TC-14 TC-15 TC-16 TC-17 TC-18 TC-19 TC-20 TC-21 TC-22 TC-23 TC-24 TC-25 TC-26 TC-27 TC-28 TC-29 TC-30 TC-31 TC-32 TC-33 TC-34 TC-35 TC-36 TC-37 TC-38 TC-39 TC-40 TC-41 TC-42 TC-43 TC-44 TC-45 TC-46
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