|
Details, datasheet, quote on part number:RMPA2451-58
| |
| Part: | RMPA2451-58 |
| Category: | RF & Microwaves => Amplifiers => Power Amplifiers => MMIC |
| Description: | Circuit Description = 2.4-2.5 GHZ GAAS Mmic Power Amplifier ;; Frequency = 2.4-2.5 GHZ |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMPA2451-58 datasheet File size : 108 kB |
| Request For quote: | Find where to buy RMPA2451-58
|
| |
Datasheet text preview:
# 425430398
Description
RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
Raytheon RF Components' RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for high efficiency applications. External matching components are required to optimize the RF performance. The MMIC chip design utilizes Raytheon RF Components' 0.25µm power Pseudomorphic High Electron Mobility (PHEMT) process.
Features
38% Power Added Efficiency 29 dBm Typical Output Power Small package outline: 0.28"x 0.28"x 0.07" Low Power Mode: 0 dBm
Absolute Ratings
Parameter Positive Drain DC Voltage Negative Gate DC Voltage Sim ultaneous Drain to Gate Voltage RF Input Power (from 50 source) Drain Current, First Stage Drain Current, Second Stage Gate Current Channel Temperature Operating Case Temperature Storage Temperature Range Thermal Resistance (Channel to Case)
S y mb o l Vd1,Vd2 Vg1,Vg2 Vd-Vg Pin Id1 Id2 Ig Tc Tcase Tstg Rjc
Min 0 -5
Ma x +8 0 +10 +10 75 525 5 175 85 125 33
Units Volts Volts Volts dBm mA mA mA °C °C °C ° C/Watt
-40 -40
Electrical Characteristics1
Parameter Frequency Range Gain1 Output Power, P1dB1 Power Added Efficiency
Min 2400 28.5 27
Typ 33 29 38
Max 2500
Unit M Hz dB dBm %
Parameter 3rd order Intermod. Product2 Drain Current (Id1 + Id2) Gate Current (Ig1 + Ig2) Input Return Loss (50W) Low Power Mode, Pout3
Min
Typ -35 430 2:1
Max Unit -2 7 5 dBc mA mA dB dBm
0
Notes: 1. P roduction Testing includes Gain, Output Power at 1-dB gain compression (P1dB) and Input Return Loss at Vd1 = Vd2 = +5.0V ; Vg1,Vg2 = -0.5V (nominal), adjust Vg1 and Vg2 to get Idq1 = 60 mA, Idq2 = 340 mA and at F = 2.45 GHz, at 250C. 2. Two tone 3rd order Output Intermodulation products (IM3) are measured with total output power level of 25dBm (tone spacing is 1MHz). 3. V g1, Vg2 tied together. Vd = 5V until Idq total = 45 mA, Pin = -10 dBm. Other Parameters are guaranteed by Design Validation Testing (DVT).
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice. Revised August 5, 2002 Page 1
Raytheon RF Components 362 Lowell Street Andover, MA 01810
# 425430398
Application Information
RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. The following describes the procedure for evaluating the RMPA2451-58, a partially-matched PHEMT monolithic power amplifier which has been designed for wireless applications in the 2.4 - 2.5 GHz ISM band, in a surface mount package. The package outline, along with the pin designations, is provided as Figure 1. The functional block diagram of the packaged product is provided as Figure 2. It should be noted that the RMPA2451-58 requires the use of external passive components to form the DC bias and RF output matching circuits. The schematic for a recommended DC bias / RF matching circuit is shown in Figure 3, along with a list of the appropriate components. Figure 4 illustrates the layout of an evaluation board based on this schematic (RMPA2451-58-TB). Figures 5 and 6 illustrate typical device performance. This data for various operating parameters was obtained across the design bandwidth over a range of temperatures. Figure 5 shows the variation in Gain and P1dB with temperature and operating frequency. Figure 6 shows the 3rd-order intermodulation product measured at different total output power levels.
Figure 1 Package Information
TOP VIEW
0.200 SQ. 654 3 2 1 0.015
BOTTOM VIEW
Pin #
1 2 3 4 5 6 7 8 9 10 11 12 BASE
Description
Vd2 + RFOut Vd2 + RFOut Vd2 + RFOut GND Vd1 GND GND RF In GND Vg1 Vg2 GND GND
7 8 9
Raytheon RMPA2451-58 PPYYWWX
0.041
PLASTIC LID
10 11 12 0.010 0.230 0.246 0.282 0.070 MAX.
SIDE SECTION
Figure 2 Functional Block Diagram
Pin #5 V d1
Pins #4, #6, #7, #9, #12 Ground
Pin #8 RF INPUT
Pins #1, #2, #3 RF OUTPUT & Vd2
Package Underside GROUN D
Pin #10 V g1
Pin #11 V g2
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice. Revised August 5, 2002 Page 2
Raytheon RF Components 362 Lowell Street Andover, MA 01810
# 425430398
RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier
V V V
PRODUCT INFORMATION
Test Procedure
for the evaluation board (RMPA2451-58-TB)
It is important that the following points be noted prior to testing; Pin designations are as shown in Figure 2 and 4. Vgg1 and Vgg2 are the negative Gate bias voltages applied at the pins of the evaluation test board.
dd1 g1 d1
and Vdd2 are the positive Drain bias voltages applied at the pins of the evaluation test board.
and Vg2 are the negative Gate bias voltages applied at the pins of the package. and Vd2 are the positive Drain bias voltages applied at the pins of the package.
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE DRAIN VOLTAGES (VD1, VD2) ARE PRESENT MAY DAMAGE THE AMPLIFIER. The following sequence of procedures must be followed to properly test the amplifier: Step 1: Turn the RF power OFF. Step 2: Use the GND terminals of the evaluation board for the ground of the DC supplies. Step 3: Apply a nominal voltage of approximately 3.0V to both Vgg1 and Vgg2 terminals. Step 4: Apply a nominal voltage of +5.0V to the Vdd terminals. Adjust Vgg2 to provide a second stage quiescent Drain current, Idd2, of 340 mA.. Adjust Vgg1 to give a first stage quiescent Drain current, Id1 of 60mA.. Step 5: Apply an RF signal within the ISM frequency range (2.4 - 2.5 GHz) at an initial input power level of -10 dBm. Step 6: To perform intermodulation product measurements, a second RF signal generator with a frequency difference of 1 MHz is required, along with an appropriate power combiner. The test configuration should allow this additional generator to provide the same input power level as the first generator into the device. Intermodulation readings may then be made at the required total output power levels. Step 7: To operate at lower quiescent Drain currents, increase the magnitudes of Vgg1 and Vgg2 as required, alternatively to operate at higher quiescent Drain currents, the magnitudes of Vgg1 and Vgg2 should be decreased accordingly. Step 8: When turning the amplifier OFF, the power-up sequence should be reversed.
Figure 3 Schematic of a recommended DC bias/ RF matching circuit
V dd1 C2 C1 C3 L2
Raytheon RMPA24 51 PPYYWWX
C3 RF Input
RF Output L1 C4 V dd2
V gg1 C2 C1 C1 V gg2 C2
C1
C2
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice. Revised August 5, 2002 Page 3
Raytheon RF Components 362 Lowell Street Andover, MA 01810
|
|
