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Details, datasheet, quote on part number:RMPA25000
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| Part: | RMPA25000 |
| Category: | RF & Microwaves => Amplifiers => Power Amplifiers => MMIC |
| Description: | Circuit Description = 23.5-26 GHZ 2 Watt Power Amplifier Mmic ;; Frequency = 23.5-26 GHZ ;; SS Gain = 18 DB ;; Pout @ 1dB = 32 DBM |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMPA25000 datasheet File size : 149 kB |
| Request For quote: | Find where to buy RMPA25000
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Datasheet text preview:
RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
ADVANCED INFORMATION
Description
The Raytheon RMPA25000 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA25000 is a 2-stage GaAs MMIC amplifier utilizing Raytheon's advanced 0.15 mm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
18 dB small signal gain (typ.) 33 dBm saturated power out (typ.) Circuit contains individual source vias Chip size 4.45 mm x 3.87 mm
Absolute Maximum Ratings
Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol Vd Vg Vdg Id Pin Tc Tstg Rj c
Value +6 -2 +8 2096 +20 -30 to +85 -55 to +125 8.8
Unit Volts Volts Volts mA dBm °C °C °C/W
Electrical Characteristics1
Parameter Frequency Range Gate Voltage (Vg)2 Gain Small Signal (Pin=-5 dBm) Gain Variation vs. Frequency Power Output at 1 dB Compression Power Output Saturated: (Pin=+17 dBm)
Min 23.5 13
Typ -0.3 18
Max 26
Unit GHz V dB
Parameter Drain Current at Pin=-5 dBm Drain Current at P1 dB Compression Power Added Efficiency (PAE) at P1dB OIP3 Input Return Loss (Pin=-5 dBm) Output Return Loss (Pin=-5 dBm)
Min
Typ 1200 1430
Max Unit mA mA
+/-1 32 31.5 33
dB dBm dBm
22 38 12 12
% dBm dB dB
Note: 1. Operated at 25°C, 50 ohm system, Vd=+5V, quiescent current (Idq)=1200 mA). 2. Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1200 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 11, 2002 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
ADVANCED INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
Figure 1 Functional Block Diagra m
MMIC Chip
Drain Supply (VDA & VDB)
RF IN
RF OUT
Ground (Back of Chip)
Gate Supply (VGA & VGB)
Figure 2 Chip Layout and Bond Pad Locations (Chip Size=4.454 mm x 3.874 mm x 50 µm. Back of Chip is RF and DC Ground)
Dimensions in mm
3.737 3.874 3.690 3.614
2.167 1.937 1.707
0.137
0.261 0.202 0.0 0.0 0.149 0.226 0.726 1.699 2.724 2.984 3.814 4.250 4.454
Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 11, 2002 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
ADVANCED INFORMATION
Figure 3 Schematic of Application Circuit
Drain Supply (Vd= +5 V) (Connect to both VDA & VDB) 10,000pF Bond Wire Ls L L MMIC Chip RF IN RF OUT 100pF
L Ground 100pF (Back of Chip) L 10,000pF Gate Supply (Vg) (VGA and/or VGB) Vg (Negative) 10,000pF 2 mil Gap 100pF 10,000pF 100pF Bond Wire Ls
Figure 4 Recommended Assembly and Bonding Diagram
Vd (Positive)
Die-Attach 80Au/20Sn
5mil Thick Alumina 50-Ohm RF Input
5 mil Thick Alumina 50-Ohm RF Output
100pF 10,000pF Vg (Negative)
100pF 10,000pF Vd (Positive) L< 0.015" (4 Places)
Note: Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 11, 2002 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
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