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Details, datasheet, quote on part number:RMPA2550-252
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| Part: | RMPA2550-252 |
| Category: | RF & Microwaves => MMIC |
| Description: | Circuit Description = Dual Frequency Band Ingap HBT Linear Wlan Poweramplifier For 802.11a/b/g Applications ;; Frequency = 2.4-5.35 GHZ |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMPA2550-252 datasheet File size : 564 kB |
| Request For quote: | Find where to buy RMPA2550-252
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Datasheet text preview:
Raytheon
RF Components
RMPA2550-252
2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION
The RMPA2550-252 is a dual f requency band power amplifier designed f or high perf ormance W LAN applications in the 2.4 - 2.5 GHz and the 5.15 - 5.35 GHz frequency bands. The single low profile 20 pin 3 x 4 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows f or simplified integration. The two on-chip detectors provide power sensing capability while the logic control provides power saving shutdown options. The PA's low power consumption and excellent linearity are achieved using Raytheon RF Components' InGaP Heterojunction Bipolar Transistor (HBT) technology. ! ! ! ! ! ! ! ! ! ! ! Dual band operation in a single package design > 26 dB small signal gain both f requency bands > 26 dBm output power @ 1 dB compression both f requency bands 4% EVM at 19 dBm Pout, 2.45 GHz; 2% EVM at 18 dBm Pout, 5.25 GHz 3.3 V single positive supply operation Adjustable bias current operation Two power sav ing shutdown options (bias and logic control) Separate integrated power detectors with 20 dB dynamic range Low profile 20 pin, 3 x 4 x 1 mm standard QFN leadless package Internally matched to 50 ohms Optimized f or use in 802.11a/b/g applications
Parameter
Positive Supply V oltag e Supply C urr ent V oltage Mirr or Logic V oltag e RF Input Pow er C as e Oper ating T emper atur e Stor ag e T emper atur e
Description
Features
Absolute Ratings1
Sym bol
VC IC 2.4 IC 5.0 VM VL Pin TCase Tstg
Value
6 820 700 5 5 10 - 40 to +85 - 55 to +150
Units
V mA mA V V dB m °C °C
Electrical Characteristics 2.4 2.5 GHz2
Parameter
Fr equenc y Supply Voltage G ain P1dB C ompr ession Quiesc ent C urr ent Standby C urr ent3 Shutdown C urr ent4 Curr ent @ P1dB C omp EVM5 Po=16 dBm, Ic=135 mA Po=19 dBm, Ic=155 mA Input R etur n Loss Output R etur n Loss D etector O utput 2nd H armonic O utput (P 1dB) Logic S hutdown C ontr ol (VL 2.4): D evic e Off, Logic High D evic e O n, Logic Low Logic C urr ent Turn- on Time Turn- off Time
Minimum
2.4 3.0 24.5 25 70
Typical
3.3 26 26.5 110 0.7 <1 365 2 4 15 12 03 -45
Maxim um
2.5 3.6 30 135
Unit
G Hz V dB dB m mA mA µA mA % % dB dB V dBc
425 3 7
2.4 0.5 150 <1 <1
Not e: 1. N o per manent damage with only one par ameter s et at extr eme limit. O ther par ameters s et to typic al values. 2. VC1 2.4,VC2 2.4, VM 2.4= 3.3 V olts, Tc=25°C 3. Standby c urr ent when s hutdown fr om logic input. 4. S hutdown c urr ent when s upply voltage is dis abled. 5. Perc entage incr eas e ab ove s ystem nois e floor , 802.11g, OFD M, 54 Mbps. E VM not measur ed 100% in pr oduction.
V V µA µS µS
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed March 28, 2003 P age 1
Raytheon RF C omponents 362 Low ell Str eet Andover, MA, USA 01810
Raytheon
RF Components
RMPA2550-252
2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION
Parameter Frequency Supply Voltage Gain P1dB Compression Quiescent Current2 Standby Current3 Shutdown Current4 Current @ P1dB Comp EVM5 Po=18dBm, Ic=240mA Input Return Loss Output Return Loss Detector Output Harm onic Output6 Logic Shutdown Control (VL 5.0): Device On, Logic High Device Off, Logic Low Logic Current Turn-on Tim e Turn-off Tim e Minimum 5.15 3.0 Typical 3.3 27 26 140-200 1.9 <1 450 2 12 10 0 1.3 -30 Maxim um 5.35 3.6 Unit GHz V dB dBm mA mA µA mA % dB dB V dBc
Electrical Characteristics Continued 5.15 5.35 GHz1
2.4 0.5 150 <1 <1
V V µA µS µS
Not e:. 1. VC 1 5.0, VC 2 5.0, VC 3 5.0, VM13 5.0, V M2 5.0 = 3.3 V olts, Tc=25°C 2. See data on pages 10, 11. 3. Standby curr ent when shutdown fr om logic input. 4. Shutdown curr ent when supply voltage is dis abled. 5. Perc entage incr eas e above s ystem nois e floor, 802.11a, O FDM, 54 Mbps. E VM not measur ed 100% in pr oduction. 6. At Pout=20 dBm
Package Outline
Dim ensions in inches [mm]
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed March 28, 2003 P age 2
Raytheon RF C omponents 362 Low ell Str eet Andover, MA, USA 01810
Raytheon
RF Components
RMPA2550-252
2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION
Functional Block Diagram
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Backside Ground Description VM 2.4 DT2 2.4 DT1 2.4 (Vdet) VC2 2.4 N/C RF OUT 2.4 N/C N/C RF OUT 5.0 DT1 5.0 (Vdet) VC3 5.0 VC2 5.0 VM2 5.0 VL 5.0 VM13 5.0 VC1 5.0 RF IN 5.0 VC1 2.4 RF IN 2.4 VL 2.4
Bias Detector Input Match
5.0 GHz PA
Output Match
Bias
Input Match
2.4 GHz PA
Output Match Detector
Bias
Evaluation Board Layout
J1 J2
Actual Board Size = 2.0" X 1.5"
J3
J4
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed March 28, 2003 P age 3
Raytheon RF C omponents 362 Low ell Str eet Andover, MA, USA 01810
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