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Details, datasheet, quote on part number:RMPA29400
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| Part: | RMPA29400 |
| Category: | RF & Microwaves => Amplifiers => Power Amplifiers => MMIC |
| Description: | Circuit Description = 2.8 Watt Power Amplifier Mmic ;; Frequency = 27-32 GHZ ;; SS Gain = 25 DB ;; Pout @ 1dB = 33 DBM |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMPA29400 datasheet File size : 247 kB |
| Request For quote: | Find where to buy RMPA29400
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Datasheet text preview:
Raytheon
RF Components
RMPA29400
27-32 GHz 2.8 Watt Power Amplifier MMIC
ADVANCED INFORMATION The RMPA29400 is a high efficiency power amplifier designed f or use in point to point radio, point to multi-point communications, and other millimeter wav e applications requiring either superior linearity of saturated power perf ormance. The RMPA29400 is a three stage GaAs MMIC amplifier utilizing Raytheon RF Component's advanced 0.15 µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achiev e the required total power output. ! ! ! ! ! ! ! 27 32 GHz Frequency Range 25 dB Nominal Small Signal Gain 33 dBm Nominal Power Out at 1 dB Compression 42 dBm OIP3 @ 20 dBm Pout/Tone RF Input and Output Internally Matched to 50 Ohms 0.15 µm PHEMT Technology Chip Size 4.73 mm x 3.42 mm
Description
Features
(At 25°C) 50 system, Vd=+5 V, Quiescent current (Idq) = 1.6 A
Electrical Characteristics
Parameter Frequency Range Gate Voltage (Vg)2 Gain Small Signal at Pin=0 dBm Power Output at 1 dB Compression Power Out Saturated OIP3 (20 dBm Pout/Tone 10 MHz Tone Sep)
Min 27
Typ -0.7 25 33 34.5 42
Max Unit 32 GHz V dB dBm dBm dBm
Parameter Drain Current at Pin=0 dBm Drain Current at P1 dB Compression Power Added Efficiency at P1dB Compression Input Return Loss (Pin=0 dBm) Output Return Loss (Pin=0 dBm)
Min
Typ 1.6 2.0 22 10 10
M ax Unit A A % dB dB
Absolute Ratings1
Parame er Parametter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Base plate Temperature Storage Tem perature Range Therm al Resistance (Channel to Backside)
Sym bo Sym boll Vd Vg Vdg ID PIN TC TStg Rjc
Value +6 -2 +8 3224 22 -30 to +85 -55 to +125 5.6
Uni Unitt Volts Volts Volts mA dBm °C °C °C/W
Not e: 1. N o per manent damage with only one par ameter s et at extr eme limit. O ther par ameters s et to typic al values. 2. T ypic al r ange of negative gate voltag e is 0.9 to to 0.1V to s et typic al Idq of 1.6 A .
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed Apr il 7, 2003 P age 1
R aytheon RF C omponents 362 Low ell Str eet Andover, MA, USA 01810
Raytheon
RF Components
RMPA29400
27-32 GHz 2.8 Watt Power Amplifier MMIC
ADVANCED INFORMATION CAUT ION: THIS IS AN ESD SENSITIVE DEVICE Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment f or power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment f or PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surf aces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 12 mils long corresponding to a typical 2 mil gap between the chip and the substrate material.
Drain Supply Vd
Application Information
Functional Block Diagram
MMIC Chip
RF IN
RF OUT
Ground (Back of Chip)
Gate Supply Vg
Chip Layout and Bond Pad Locations
(Chip Size=4.734 mm x 3.419 mm x 50 µm. Back of Chip is RF and DC Ground)
Dimensions in mm 3.280 3.161 3.419 3.293 3.255
1.910 1.710 1.510
0.258 0.139 0.0 www.raytheonrf.com 1.540 2.776 3.541 4.734
0.164 0.127
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed Apr il 7, 2003 P age 2
R aytheon RF C omponents 362 Low ell Str eet Andover, MA, USA 01810
Raytheon
RF Components
RMPA29400
27-32 GHz 2.8 Watt Power Amplifier MMIC
ADVANCED INFORMATION
0.01µF L 100 pF Bond W ire L's L MMIC Chip Drain Supply (Vd= +5V) (Connect to both VDA & VDB)
Recommended Application Schematic Circuit Diagram
RF IN
RF OUT
Ground (Back of Chip)
100 pF
L Bond W ire L's L
Gate Supply (-Vg) (VGA and/or VGB)
0.01µF Vd (Positive)
Figure 4 Recommended Assembly and Bonding Diagram
2 mil Gap Die-Attach 80Au/20Sn
0.01µF 100pF
5mil Thick Alumina 50-Ohm
N otes: MMIC has Vg and Vd bias pads acc essible on both top and bottom s ides. G ate bias connec tions ar e r equir ed only on one side. Dr ain bias connec tions ar e r equir ed on both sides . Use 0.003" x 0.0005" gold ribbon or 1 mil gold wir e f or bonding. RF input and output bonds should be less than 15 mils long with s tr ess r elief .
5 mil Thick Alumina 50-Ohm
RF Input
RF Output
L< 15 mils (4 Places)
100pF 0.01µF Vg (Negative)
100pF 0.01µF Vd (Positive)
R aytheon RF C omponents 362 Low ell Str eet Andover, MA, USA 01810
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed Apr il 7, 2003 P age 3
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