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Details, datasheet, quote on part number:RMPA39000
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| Part: | RMPA39000 |
| Category: | RF & Microwaves => Amplifiers => Power Amplifiers => MMIC |
| Description: | Circuit Description = 37-40 GHZ GAAS Mmic Power Amplifier ;; Frequency = 37-40 GHZ ;; SS Gain = 24 DB ;; Pout @ 1dB = 28 DBM |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMPA39000 datasheet File size : 129 kB |
| Request For quote: | Find where to buy RMPA39000
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Datasheet text preview:
RMPA39000
37-40 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
Description
The Raytheon RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3-stage GaAs MMIC amplifier chip utilizing Raytheon's advanced 0.15 µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
24 dB small signal gain (typ.) 29 dBm saturated power output (typ.) Circuit contains individual vias Chip size 4.28mm x 2.90 mm
Absolute Maximum Ratings
Parameter Positive DC Voltage (5V Typical) Negative DC Voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50 ohm source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol Vd Vg Vdg Id P IN TC TStg Rjc
Value +6 -2 +8 1092 +20 -30 to +85 -55 to +125 17
Units Volts Volts Volts mA dBm °C °C °C/W
Electrical Characteristics
50 ohm system, Vd = +5V, Quiescent current (Idq) = 700 mA
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin=0dBm Gain Variation vs Freq Power Output at 1 dB Compression Power Output Saturated (Pin = + 13dBm) Drain Current at Pin = 0 dBm
Min 37
Typ -0.15
Max 40
Unit GHz V dB dB dBm dBm mA
Parameter Drain Current at P1 dB Compression Drain Current at Psat (Pin= + 13dBm) Power Added Efficiency (PAE) at P1 dB Input Return Loss (Pin = -10 dBm) Output Return Loss (Pin = -10 dBm)
Min
Typ 730 750 17 8 7
Max Unit mA mA % dB dB
20
24 ±1 28
27.5
29 700
Note: 1. Typical range of the negative gate voltages is -0.5 to 0.0V to set typical Idq of 700 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 17, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA39000
37-40 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
Drain Supply (Vd= +5V) (VDA & VDB) MMIC Chip
Figure 1 Functional Block D i ag r a m
RF IN
RF OUT
Ground (Back of Chip)
Gate Supply (VGA & VGB)
Figure 2 Chip Layout and Bond Pad Locations (Chip Size = 0.169 x 0.114 x 0.002 Back of Chip is RF and DC Ground)
Dimensions in inches 0.114 0.103
0.004
0.165
0.104
0.068 0.061
0.059
0.015 0 0.008 0
Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 17, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
0 0.160 0.169
RMPA39000
37-40 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
Figure 3 Recommended Application Schematic Circuit Diagram
Bond Wire L's L MMIC Chip 10,000 pF L 100 pF Drain Supply (Vd= +5V) (Connect to both VDA & VDB)
RF IN
RF OUT
Ground (Back of Chip)
100 pF
L Bond Wire L's L
Gate Supply (Vg) (VGA and/or VGB)
10,000 pF
Figure 4 Recommended Assembly and Bonding D i ag r a m
Vg (Negative) 2 mil Gap
10,000 pF
10,000 pF
Vd (Positive) Die-Attach 80Au/20Sn
100 pF 5mil Thk Alumina 50-Ohm
100 pF
5 mil Thk Alumina 50-Ohm
RF Input
RF Output
L< 0.015" (4 Plcs) 100 pF Cap 10,000 pF 100 pF
Vg (Negative)
Vd (Positive)
10,000 pF
Note: Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 17, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
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