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Details, datasheet, quote on part number:RMPA39100
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| Part: | RMPA39100 |
| Category: | RF & Microwaves => Amplifiers => Power Amplifiers => MMIC |
| Description: | Circuit Description = 37-40 GHZ 1 Watt Power Amplifier Mmic ;; Frequency = 37-40 GHZ ;; SS Gain = 18 DB ;; Pout @ 1dB = 29 DBM |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMPA39100 datasheet File size : 1742 kB |
| Request For quote: | Find where to buy RMPA39100
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Datasheet text preview:
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
PRODUCT INFORMATION
Description
The Raytheon RMPA39100 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39100 is a 3-stage GaAs MMIC amplifier utilizing Raytheon's advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
18 dB small signal gain (typ.) 30 dBm saturated power output (typ.) Circuit contains individual source vias Chip Size 4.28 mm x 3.19 mm
Absolute Maximum Ratings
Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol Vd Vg Vdg ID P IN TC TStg Rj c
Value +6 -2 +8 1392 +18 -30 to +85 -55 to +125 9
Units Volts Volts Volts mA dBm °C °C °C/W
Electrical Characteristics
(At 25°C) 50 system, Vd=+5 V, Quiescent current (Idq)=1000 mA
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pin=0 dBm Gain Variation vs. Frequency Power Output at 1 dB Compression Power Output Saturated: (Pin=+14.5 dBm) Drain Current at Pin=0 dBm Drain Current at P1 dB Compression
Min 37
Typ -0.2
Max Unit 40 GHz V dB dB dBm dBm mA mA
Parameter Drain Current at Psat (Pin=+14.5 dBm) Power Added Efficiency (PAE): at P1dB OIP3 (17dBm/Tone) (10 MHz Tone Sep.) Input Return Loss (Pin=0 dBm) Output Return Loss (Pin=0 dBm)
Min
Typ 1200 17 35 10 7
Max Unit mA % dBm dB dB
16
18 +/-1.5 29
28
30 1000 1160
Note: 1. Typical range of the negative gate voltages is -0.5 to 0.0V to set typical Idq of 1000 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 17, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
PRODUCT INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mils gap between the chip and the substrate material.
Figure 1 Functional Block Diagra m
MMIC Chip RF IN
Drain Supply (VDA & VDB)
RF OUT
Ground (Back of Chip)
Gate Supply (VGA & VGB)
0.1256" (3.190mm) 0.1178" (2.994mm)
Figure 2 Chip Layout and Bond Pad Locations (Chip Size=0.168" x 0.1256" x 0.002". Back of Chip is RF and DC Ground)
0.0699" (1.777mm) 0.0628" (1.597mm) 0.0558" (1.417mm)
0.0078" (.2mm) 0.0 0.0 0.0078" (.2mm) 0.0356" (.9mm) 0.0745" (1.893mm) 0.1159" (2.944mm) 0.168" 0.1595" (4.279mm) (4.052mm)
Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 17, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
PRODUCT INFORMATION
Figure 3 Schematic of Application Circuit
Drain Supply (Vd= +5 V) (Connect to both VDA & VDB) 10,000pF Bond Wire Ls L L MMIC Chip RF IN RF OUT 100pF
L Ground (Back of Chip) 100pF L 10,000pF Gate Supply (Vg) (VGA and/or VGB) Bond Wire Ls
Figure 4 Recommended Assembly and Bonding Diagra m
2 mil Gap
Vg (Negative) 10,000pF 10,000pF
Vd (Positive) Die-Attach 80Au/20Sn
100pF 5mil Thick Alumina 50-Ohm RF Input
100pF 5 mil Thick Alumina 50-Ohm RF Output
100pF 10,000pF Vg (Negative)
100pF
10,000pF Vd (Positive)
L< 0.015" (4 Places)
Note: Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 17, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
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