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Details, datasheet, quote on part number:RMPA39300
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| Part: | RMPA39300 |
| Category: | RF & Microwaves => Amplifiers => Power Amplifiers => MMIC |
| Description: | Circuit Description = 37-40 GHZ 2 Watt Power Amplifier Mmic ;; Frequency = 37-40 GHZ ;; SS Gain = 16 DB ;; Pout @ 1dB = 33 DBM |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMPA39300 datasheet File size : 293 kB |
| Request For quote: | Find where to buy RMPA39300
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Datasheet text preview:
Raytheon
RF Components
RMPA39300
37-40 GHz 2 Watt Power Amplifier MMIC
ADVANCED INFORMATION The RMPA39300 is a high efficiency power amplifier designed f or use in point to point radio, point to multi-point communications, and other millimeter wav e applications. The RMPA39300 is a three stage GaAs MMIC amplifier utilizing Raytheon RF Component's advanced 0.15 µm gate length power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. The on-chip detector provides power sensing capability. ! ! ! ! ! ! ! ! 37 40 GHz Frequency Range 16 dB Nominal Small Signal Gain 33 dBm Nominal Power Out at 1 dB Compression 40 dBm OIP3 @ 16 dBm Pout/Tone Integrated Power Detector RF Input and Output Internally Matched to 50 Ohms 0.15 µm PHEMT Technology Chip Size 5.05 mm x 3.91 mm
Description
Features
Absolute Ratings1
Parame er Parametter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Base plate Temperature Storage Tem perature Range Therm al Resistance (Channel to Backside)
Sym bo Sym boll Vd Vg Vdg ID PIN TC TStg Rjc
Value +6 -2 +8 4950 26 -30 to +85 -55 to +125 4.3
Uni Unitt Volts Volts Volts mA dBm °C °C °C/W
(At 25°C) 50 system, Vd=+5 V, Quiescent current (Idq) = 2.5A
Electrical Characteristics
Parameter Frequency Range Gate Voltage (Vg)2 Gain Small Signal at Pin=0 dBm Power Output at 1 dB Compression Power Saturated OIP3 (16 dBm Pout/Tone 20 MHz Tone Sep)
Min 37
Typ -0.3 16 33 34 40
Max Unit 40 GHz V dB dBm dBm dBm
Parameter Drain Current at Pin=0 dBm Drain Current at P1 dB Compression Input Return Loss (Pin=0 dBm) Output Return Loss (Pin=0 dBm) Detector Output (Pout=27 dBm)
Min
Typ 2.5 2.8 9 9 0.4
M ax Unit A A dB dB V
Not e: 1. 2.
N o permanent damage with only one par ameter s et at extr eme limit. Other par ameters s et to typic al values. Typic al r ange of negative gate voltag es is 0.9 to to 0.1V to s et typic al Idq of 2.5 A.
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed Apr il 7, 2003 P age 1
Raytheon RF C ompon ents 362 Lowell Str eet Andover, MA 01810
Raytheon
RF Components
RMPA39300
37-40 GHz 2 Watt Power Amplifier MMIC
ADVANCED INFORMATION CAUT ION: THIS IS AN ESD SENSITIVE DEVICE Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment f or power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment f or PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surf aces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing f or appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mils gap between the chip and the substrate material.
Application Information
Figure 1 Functional Block Diagram
RF IN
Drain Supply Drain Supply Drain Supply Vd1 Vd2 Vd3 MMIC Chip
Refer ence Det ector Voltage Vref (not connected to circuit)
RF OUT
Ground (Back of Chip)
Gate Supply Vg
Output Power Detector Voltage Vdet
Note: For output power le vel de tection, bias both d etector and re ference diodes. DC voltage difference between det ector and reference can be used to measure output power af ter calibration. If ou tput power le vel de tection is not de sired, do not make connection to det ector bond pad.
Figure 2 Chip Layout and Bond Pad Locations
(Chip Size=5.05 mm x 3.91 mm x 50 µm. Back of Chip is RF and DC Ground)
0.0 0.50 1.01 1.50 1.88
3.07 3.28 3.81 3.914 0.0 0.01 0.36 0.90
1.89 2.38 2.53 2.68 3.16
4.16 4.70 4.95
Dimensions in mm
5.054 Raytheon RF C ompon ents 362 Lowell Str eet Andover, MA 01810
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed Apr il 7, 2003 P age 2
Raytheon
RF Components
RMPA39300
37-40 GHz 2 Watt Power Amplifier MMIC
ADVANCED INFORMATION
Drain Supply Vd=+5 V 10,000pF 100pF L L L L L L = Bond Wire Inductance Refer ence Det ector Bias Voltage Vref_bias (typ. -2.5 V) 100pF R = 50k Ohms L L Refer ence Det ector Voltage Vref RF OUT Detector Voltage Vdet L Ground (Back of Chip) L Gate Supply Vg
Note: For output power le vel de tection, bias both d etector and re ference diodes. DC voltage difference between det ector and reference ( Vdet , Vref) can be used to measure outp ut p ower af ter calibration. If ou tput power le vel detecti on is not desired, do not ma ke connection to det ector bond pad .
Figure 3 Recommended Application Schematic Circuit Diagram
100pF
MMIC Chip RF IN
100pF 10,000pF
R = 50k Ohms Detector Bias Voltage Vdet_bias (typ. -2.5 V)
Figure 4 Recommended Assembly and Bonding Diagram
10,000pF 10,000pF Vg (Negative) 2 mil Gap 5mil Thick Alumina 50-Ohm RF Input 100pF 100pF 100pF
Vd (Positive) Ref erence Detector Bias Voltage 100pF 50K Ref erence Detector Voltage Vref Detector Voltage Vdet
50K 5 mil Thick Alumina Detector 50-Ohm Bias Voltage RF Output
L< 0.015" (4 Places) Die-Attach 80Au/20Sn
Note: MMIC has Vg , Vd , Vd et a nd Vre f bias pads accessible on both top a nd bottom sides. DC bias and voltage detector connections are required only on on e side. Use 0.003" x 0.00 05" gold ribbon or 1 mil gold wire for bonding. RF input and outpu t bon ds should be less than 0.0 15" long with stress relief.
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed Apr il 7, 2003 P age 3
Raytheon RF C ompon ents 362 Lowell Str eet Andover, MA 01810
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