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Details, datasheet, quote on part number:RMPA5251-251
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| Part: | RMPA5251-251 |
| Category: | RF & Microwaves => Amplifiers => Power Amplifiers => MMIC |
| Description: | Circuit Description = Ingap HBT Linear Wlan Power Amplifier For 802.11a, HyperLAN2 Wlan Applications ;; Frequency = 4.9-5.85 GHZ |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMPA5251-251 datasheet File size : 439 kB |
| Request For quote: | Find where to buy RMPA5251-251
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Datasheet text preview:
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION The RMPA5251-251 power amplifier is designed f or high performance W LAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows f or simplified integration. The on-chip detector provides power sensing capability while the logic control provides power sav ing shutdown options. The PA's low power consumption and excellent linearity are achieved using Raytheon RF Components' InGaP Heterojunction Bipolar Transistor (HBT) technology. ! ! ! ! ! ! ! ! ! ! ! ! 4.9 to 5.85 GHz Operation 27 dB small signal gain 26 dBm output power @ 1 dB compression 2% EVM increase above system level at 18.0 dBm 3.3 V single positive supply operation Adjustable bias current operation Two power sav ing shutdown options (bias and logic control) Integrated power detector with >18 dB dynamic range Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless package Internally matched to 50 Ohms Minimal external components Optimized f or use in IEEE 802.11a, HyperLAN2 W LAN applications
Description
Features
Electrical Characteristics1
Parameter
Fr equenc y2 Supply Voltage G ain3 P1dB C ompr ession3 Quiesc ent C urr ent4 Standby C urr ent5 Shutdown C urr ent6 Mod. C urr ent @18dBm Po EVM7 Input R etur n Loss Output R etur n Loss D etector O utput3 Spurious Output H armonic O utput8 Shutdown C ontr ol (P 1): D evic e On, Logic High D evic e Off, Logic Low Logic Curr ent Turn- on Time Turn- off Time
Minimum
4.90 3.0
Typical
3.3 27 26 140- 200 1.9 <1 245 2 12 10 0 1.3 <-60 -30
Maximum
5.35 3.6
Minimum
5.15 3.0
Typical
3.3 27 26 140- 200 1.9 <1 245 2 16 10 0 1.3 <-60 -30
Maxim um
5.85 3.6
Unit
G Hz V dB dBm mA mA µA mA % dB dB V dBc dBc V V µA µS µS
2.4 0.5 150 <1 <1
2.4 0.5 150 <1 <1
Not es: 1. VC1, VC 2, VC 3, VM1, VM2, V M3 = 3.3 V olts, Tc=25°C 2. S ee P age 2,3 f or c onfigur ation details. 3. Meas ur ed Single T one. 4. S ee data on pages 9 and 14. 5. Standby curr ent when shutdown fr om logic input. 6. Shutdown curr ent when supply voltag e is dis abled. 7. Perc entage incr eas e above s ys tem level. P ower O ut = 18.0 dBm (802.11a OFDM 54 Mbps) @ 5.25 GH z 8. At P out=20 dBm
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed J une 30, 2003 P age 1
Raytheon RF C omponents 362 Low ell Str eet Andover, MA 01810
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Parameter
Positive Supply V oltag e Supply C urr ent
Absolute Ratings1
Sym bol
VC1,VC 2 IC1 IC2 IC3 VM P1 Pin TCase Tstg
Value
4.0 50 150 500 3.6 5 10 -40 to +85 -55 to +150
Units
V mA mA mA V V dB m °C °C
Voltage Mirror Logic V oltag e RF Input P ow er C as e Oper ating T emper atur e Stor ag e T emper atur e
1. N o per manent damage with only one par ameter s et at extr eme limit. O ther par ameters s et to typic al values
Functional Block Diagram
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Bias Control
Volt age Detector
Out put M atch
Input M atch
Description N/C VM1 VC1 RF IN N/C N/C VM3 N/C N/C RF OUT DT1 (Vdet) DT2 VC3 VC2 VM2 P1 (Logic)
Application Information
The RMPA5251-251 can be optimized to work over 2 frequency ranges, 4.9 to 5.35 GHz (Low Band) and 5.15 to 5.85 GHz (High Band), Using the 2 external component configurations described on Pages 3 and 4, the RMPA5251-251 can be optimized to give the best EVM, power and gain over a specified bandwidth. The following data shows the performance when the evaluation board is configured for either low or high band performance
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed J une 30, 2003 P age 2
Raytheon RF C omponents 362 Low ell Str eet Andover, MA 01810
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Evaluation Board Schematic
Backside Ground
N ote: *C3 only us ed in Low B and C onfigur ation All Mirr ors and VC c onnections c an be s epar ate or c onnec ted to a c ommon r ail.
Evaluation Board Bill of Materials Low Band
R ay t h e on
No. 1 2 3 4 5 6 7 8 9 Re f Va lue C1, C2 10 C3 1 C4 100 R1, R2 10K L1,L2, L3 10 B1 J1,J2 J3 A1
R MP A5251-251 4.90 to 5.35 GH z Operation
Unit Qty uF 2 pF 1 pF 1 Ohm 2 nH 3 1 2 11 1 S iz e 805 0603 0402 0402 0402 De scription 10 uF Capac itor 1 pF Capac itor 100 pF Capac it or 10 K Ohm Res is tor 10 nH Induc tor Fix ture B oard Jac k E nd Launc h S M A Right A ngle S ingle Header Pac k aged MMIC M FG M urata M urata M urata IM S Tok o Crown Circ uits Johns on Components Digik ey Ray theon
Eval B oard BOM
P a rt No. GRM21B R60J106K GRM39C0G010B 100V GRM36C0G101J050A Q RCI-0402-1002J LLV1005FB 10NJ G657432 142-0701-841 S 1322-12-ND RMP A 5251-251 Comm e nts Dec oupling Capac itor Det ec tor Capac itor Det ec tor Res is tor RF Chok e
R ay t h e o n
No. 1 2 3 4 5 6 7 8 9 Re f C1,C2 C4 R1,R2 L1,L3 L2 B1 J1,J2 J3 A1 V a lue 10 100 10K 10 15
RMP A5251-251 5.15 to 5.85 GH z Operatio n
Unit Qty uF 2 pF 1 Ohm 2 nH 2 nH 1 1 2 11 1 Si z e 805 0402 0402 0402 0402 De scripti on 10 uF Capac it or 100 pF Capac itor 10 K Ohm Res is t or 10 nH Induc tor 15 nH Induc tor Fix t ure B oard Jac k E nd Launc h S MA Right A ngle Single Header P ac k aged MM IC MF G Murata Murata IMS Tok o Tok o Crown Circ uits Johns on Components Digik ey Ray theon
E val Board B OM
P a rt No. GRM21B R60J106K GRM36C0G101J050A Q RCI-0402-1002J LLV 1005FB 10NJ LLV 1005FB 15NJ G657432 142-0701-841 S 1322-12-ND RMP A 5251-251 Com m e nts Dec oupling Capac it or Detec tor Capac itor Detec tor Res is tor RF Chok e RF Chok e
High Band
www.raytheonrf.com
Specificat ions ar e based on most curr ent or lat est r evision. R evis ed J une 30, 2003 P age 3
Raytheon RF C omponents 362 Low ell Str eet Andover, MA 01810
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